@inproceedings{82c5fa2c7f7e46feaf0ec230fa2036e9,
title = "Properties and applications of RuO2/GaN and related Schottky contacts",
abstract = "RuO2/GaN and related materials were investigated as Schottky contacts in GaN-based photo-receiving and electronic devices. It was demonstrated that an RuO2 film forms a stable Schottky contact on a GaN layer with a barrier height (φB) of 0.93 eV and transmittance of 70\% in the visible and near UV region. The RuO2/GaN Schottky diode showed a breakdown at over -50 V and leakage current of only 0.3 nA at -5 V. The RuO2/GaN Schottky-type photodetector also exhibited a UV/Visible rejection ratio of over 3×106 and responsivity of 0.23 A/W at 330 nm. The RuO2 gate AlGaN/GaN HFET exhibited a high drain current (Id)of 689.3 mA/mm and high transconductance (g)of 197.4 mS/mm. The cut-off frequency (f1) and maximum oscillation frequency (fmax) were 27.0 GHz and 45.5 GHz, respectively.",
author = "Hahm, \{Sung Ho\} and Lee, \{Yong Hyun\} and Lee, \{Myoung Bok\} and Lee, \{Jung Hee\}",
note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 ; Conference date: 22-10-2001 Through 25-10-2001",
year = "2001",
doi = "10.1109/ICSICT.2001.982134",
language = "English",
series = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1280--1285",
editor = "Hiroshi Iwai and Xin-Ping Qu and Bing-Zong Li and Guo-Ping Ru and Paul Yu",
booktitle = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",
address = "United States",
}