Properties of BaTiO3 films sputter deposited on PET for pulse power capacitors

Sang Shik Park

doi:10.1080/00150193.2013.848761

Properties of BaTiO₃ films sputter deposited on PET for pulse power capacitors

Sang Shik Park

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Flexible BaTiO₃ films as dielectric materials for pulse power capacitors were deposited on polyethylene terephthalate (PET) substrates by r.f. magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible BaTiO₃ films were dependent on the O ₂/Ar gas ratio during sputtering. All BaTiO₃ films were amorphous, regardless of the O₂/Ar gas ratio, due to the low substrate temperature. The leakage current and dielectric constant of the BaTiO₃ films were affected by an electron transfer mechanism. The BaTiO₃ films prepared at an O₂/Ar gas ratio of 1 exhibited a dielectric constant of 53 at 1 kHz and a leakage current of 4 × 10 ^-7 A at 500 kV/cm. This suggests that sputter-deposited flexible BaTiO₃ films are promising dielectrics that can be used in pulse power capacitors owing to their high dielectric constant, low leakage current and stable preparation by sputtering.

Original language	English
Pages (from-to)	97-104
Number of pages	8
Journal	Ferroelectrics
Volume	457
Issue number	1
DOIs	https://doi.org/10.1080/00150193.2013.848761
State	Published - 1 Jan 2013

Keywords

Amorphous BaTiO film
dielectric constant
leakage current
pulse power capacitor
sputter

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title = "Properties of BaTiO3 films sputter deposited on PET for pulse power capacitors",

abstract = "Flexible BaTiO3 films as dielectric materials for pulse power capacitors were deposited on polyethylene terephthalate (PET) substrates by r.f. magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible BaTiO3 films were dependent on the O 2/Ar gas ratio during sputtering. All BaTiO3 films were amorphous, regardless of the O2/Ar gas ratio, due to the low substrate temperature. The leakage current and dielectric constant of the BaTiO3 films were affected by an electron transfer mechanism. The BaTiO3 films prepared at an O2/Ar gas ratio of 1 exhibited a dielectric constant of 53 at 1 kHz and a leakage current of 4 × 10 -7 A at 500 kV/cm. This suggests that sputter-deposited flexible BaTiO3 films are promising dielectrics that can be used in pulse power capacitors owing to their high dielectric constant, low leakage current and stable preparation by sputtering.",

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AB - Flexible BaTiO3 films as dielectric materials for pulse power capacitors were deposited on polyethylene terephthalate (PET) substrates by r.f. magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible BaTiO3 films were dependent on the O 2/Ar gas ratio during sputtering. All BaTiO3 films were amorphous, regardless of the O2/Ar gas ratio, due to the low substrate temperature. The leakage current and dielectric constant of the BaTiO3 films were affected by an electron transfer mechanism. The BaTiO3 films prepared at an O2/Ar gas ratio of 1 exhibited a dielectric constant of 53 at 1 kHz and a leakage current of 4 × 10 -7 A at 500 kV/cm. This suggests that sputter-deposited flexible BaTiO3 films are promising dielectrics that can be used in pulse power capacitors owing to their high dielectric constant, low leakage current and stable preparation by sputtering.

KW - Amorphous BaTiO film

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Properties of BaTiO₃ films sputter deposited on PET for pulse power capacitors

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