Properties of Mn- and Co-doped bulk ZnO crystals

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; E. A. Kozhukhova; Y. W. Heo; M. P. Ivill; K. Ip; D. P. Norton; S. J. Pearton; J. Kelly; R. Rairigh; A. F. Hebard; T. Steiner

doi:10.1116/1.1856476

Properties of Mn- and Co-doped bulk ZnO crystals

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, Y. W. Heo, M. P. Ivill, K. Ip, D. P. Norton, S. J. Pearton, J. Kelly, R. Rairigh, A. F. Hebard, T. Steiner

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Abstract

Electrical and magnetic properties, room temperature optical absorption bands, and 300 and 90 K microcathodo luminescence (MCL) bands were studied in heavily Mn and Co doped (1-5 at. %) bulk ZnO crystals. Optical absorption bands near 1.9 eV (Co) and 2 eV (Mn) and MCL bands near 1.84 eV (Co) and 1.89 eV (Mn) are found to be associated with transition metal (TM) ions. These bands are assigned to internal transitions between the levels of the substitutional TM ions. The temperature dependence of the resistivity of the ZnO showed activation energies of ∼35 meV in all cases and the electron mobilities were decreased relative to the undoped material.

Original language	English
Pages (from-to)	274-279
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	1
DOIs	https://doi.org/10.1116/1.1856476
State	Published - 2005

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Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Heo, Y. W., Ivill, M. P., Ip, K., Norton, D. P., Pearton, S. J., Kelly, J., Rairigh, R., Hebard, A. F., & Steiner, T. (2005). Properties of Mn- and Co-doped bulk ZnO crystals. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 23(1), 274-279. https://doi.org/10.1116/1.1856476

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title = "Properties of Mn- and Co-doped bulk ZnO crystals",

abstract = "Electrical and magnetic properties, room temperature optical absorption bands, and 300 and 90 K microcathodo luminescence (MCL) bands were studied in heavily Mn and Co doped (1-5 at. %) bulk ZnO crystals. Optical absorption bands near 1.9 eV (Co) and 2 eV (Mn) and MCL bands near 1.84 eV (Co) and 1.89 eV (Mn) are found to be associated with transition metal (TM) ions. These bands are assigned to internal transitions between the levels of the substitutional TM ions. The temperature dependence of the resistivity of the ZnO showed activation energies of ∼35 meV in all cases and the electron mobilities were decreased relative to the undoped material.",

author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Kozhukhova, {E. A.} and Heo, {Y. W.} and Ivill, {M. P.} and K. Ip and Norton, {D. P.} and Pearton, {S. J.} and J. Kelly and R. Rairigh and Hebard, {A. F.} and T. Steiner",

year = "2005",

doi = "10.1116/1.1856476",

language = "English",

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pages = "274--279",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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TY - JOUR

T1 - Properties of Mn- and Co-doped bulk ZnO crystals

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Kozhukhova, E. A.

AU - Heo, Y. W.

AU - Ivill, M. P.

AU - Ip, K.

AU - Norton, D. P.

AU - Pearton, S. J.

AU - Kelly, J.

AU - Rairigh, R.

AU - Hebard, A. F.

AU - Steiner, T.

PY - 2005

Y1 - 2005

N2 - Electrical and magnetic properties, room temperature optical absorption bands, and 300 and 90 K microcathodo luminescence (MCL) bands were studied in heavily Mn and Co doped (1-5 at. %) bulk ZnO crystals. Optical absorption bands near 1.9 eV (Co) and 2 eV (Mn) and MCL bands near 1.84 eV (Co) and 1.89 eV (Mn) are found to be associated with transition metal (TM) ions. These bands are assigned to internal transitions between the levels of the substitutional TM ions. The temperature dependence of the resistivity of the ZnO showed activation energies of ∼35 meV in all cases and the electron mobilities were decreased relative to the undoped material.

AB - Electrical and magnetic properties, room temperature optical absorption bands, and 300 and 90 K microcathodo luminescence (MCL) bands were studied in heavily Mn and Co doped (1-5 at. %) bulk ZnO crystals. Optical absorption bands near 1.9 eV (Co) and 2 eV (Mn) and MCL bands near 1.84 eV (Co) and 1.89 eV (Mn) are found to be associated with transition metal (TM) ions. These bands are assigned to internal transitions between the levels of the substitutional TM ions. The temperature dependence of the resistivity of the ZnO showed activation energies of ∼35 meV in all cases and the electron mobilities were decreased relative to the undoped material.

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 1

ER -

Properties of Mn- and Co-doped bulk ZnO crystals

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