Properties of multilayer ceramic capacitor with BaTiO3 thin layers deposited by e-beam evaporation

Sang Shik Park

doi:10.1080/10584580500413962

Properties of multilayer ceramic capacitor with BaTiO₃ thin layers deposited by e-beam evaporation

Sang Shik Park

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

For the purpose of enhancing the capacitance of MLCCs, thin BaTiO ₃ dielectric layers and inner electrodes were prepared by ion beam assisted e-beam evaporation method. BaTiO₃ films deposited at 300°C showed an amorphous structure and the films annealed above 550°C showed polycrystalline structure. XPS analysis showed the complete oxidation from Ti metal source to TiO or BaTiO₃ phase. The dielectric constant of 130∼ 150 and dissipation factor of 2∼4% were obtained from BaTiO ₃ of single layer. The capacitance decreased with increasing the temperature and satisfied the specification of ±15% limit at 125°C. There was only small capacitance change with DC bias voltage and after annealing of films, leakage current was 10^-8∼10^-9 A at 10 V. The overall results showed that BaTiO₃ thin films by e-beam evaporation were suitable candidates for MLCC application.

Original language	English
Pages (from-to)	87-94
Number of pages	8
Journal	Integrated Ferroelectrics
Volume	74
DOIs	https://doi.org/10.1080/10584580500413962
State	Published - 2005
Event	Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17 - Shanghai, China Duration: 17 Apr 2005 → 20 Apr 2005

Keywords

Barium titanate
E-beam evaporation
Ion gun
MLCC
RTA

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10.1080/10584580500413962

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title = "Properties of multilayer ceramic capacitor with BaTiO3 thin layers deposited by e-beam evaporation",

abstract = "For the purpose of enhancing the capacitance of MLCCs, thin BaTiO 3 dielectric layers and inner electrodes were prepared by ion beam assisted e-beam evaporation method. BaTiO3 films deposited at 300°C showed an amorphous structure and the films annealed above 550°C showed polycrystalline structure. XPS analysis showed the complete oxidation from Ti metal source to TiO or BaTiO3 phase. The dielectric constant of 130∼ 150 and dissipation factor of 2∼4% were obtained from BaTiO 3 of single layer. The capacitance decreased with increasing the temperature and satisfied the specification of ±15% limit at 125°C. There was only small capacitance change with DC bias voltage and after annealing of films, leakage current was 10-8∼10-9 A at 10 V. The overall results showed that BaTiO3 thin films by e-beam evaporation were suitable candidates for MLCC application.",

keywords = "Barium titanate, E-beam evaporation, Ion gun, MLCC, RTA",

author = "Park, {Sang Shik}",

year = "2005",

doi = "10.1080/10584580500413962",

language = "English",

volume = "74",

pages = "87--94",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

note = "Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17 ; Conference date: 17-04-2005 Through 20-04-2005",

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TY - JOUR

T1 - Properties of multilayer ceramic capacitor with BaTiO3 thin layers deposited by e-beam evaporation

AU - Park, Sang Shik

PY - 2005

Y1 - 2005

N2 - For the purpose of enhancing the capacitance of MLCCs, thin BaTiO 3 dielectric layers and inner electrodes were prepared by ion beam assisted e-beam evaporation method. BaTiO3 films deposited at 300°C showed an amorphous structure and the films annealed above 550°C showed polycrystalline structure. XPS analysis showed the complete oxidation from Ti metal source to TiO or BaTiO3 phase. The dielectric constant of 130∼ 150 and dissipation factor of 2∼4% were obtained from BaTiO 3 of single layer. The capacitance decreased with increasing the temperature and satisfied the specification of ±15% limit at 125°C. There was only small capacitance change with DC bias voltage and after annealing of films, leakage current was 10-8∼10-9 A at 10 V. The overall results showed that BaTiO3 thin films by e-beam evaporation were suitable candidates for MLCC application.

AB - For the purpose of enhancing the capacitance of MLCCs, thin BaTiO 3 dielectric layers and inner electrodes were prepared by ion beam assisted e-beam evaporation method. BaTiO3 films deposited at 300°C showed an amorphous structure and the films annealed above 550°C showed polycrystalline structure. XPS analysis showed the complete oxidation from Ti metal source to TiO or BaTiO3 phase. The dielectric constant of 130∼ 150 and dissipation factor of 2∼4% were obtained from BaTiO 3 of single layer. The capacitance decreased with increasing the temperature and satisfied the specification of ±15% limit at 125°C. There was only small capacitance change with DC bias voltage and after annealing of films, leakage current was 10-8∼10-9 A at 10 V. The overall results showed that BaTiO3 thin films by e-beam evaporation were suitable candidates for MLCC application.

KW - Barium titanate

KW - E-beam evaporation

KW - Ion gun

KW - MLCC

KW - RTA

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U2 - 10.1080/10584580500413962

DO - 10.1080/10584580500413962

M3 - Conference article

AN - SCOPUS:33645532323

SN - 1058-4587

VL - 74

SP - 87

EP - 94

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

T2 - Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17

Y2 - 17 April 2005 through 20 April 2005

ER -

Properties of multilayer ceramic capacitor with BaTiO₃ thin layers deposited by e-beam evaporation

Abstract

Keywords

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