Abstract
For the purpose of enhancing the capacitance of MLCCs, thin BaTiO 3 dielectric layers and inner electrodes were prepared by ion beam assisted e-beam evaporation method. BaTiO3 films deposited at 300°C showed an amorphous structure and the films annealed above 550°C showed polycrystalline structure. XPS analysis showed the complete oxidation from Ti metal source to TiO or BaTiO3 phase. The dielectric constant of 130∼ 150 and dissipation factor of 2∼4% were obtained from BaTiO 3 of single layer. The capacitance decreased with increasing the temperature and satisfied the specification of ±15% limit at 125°C. There was only small capacitance change with DC bias voltage and after annealing of films, leakage current was 10-8∼10-9 A at 10 V. The overall results showed that BaTiO3 thin films by e-beam evaporation were suitable candidates for MLCC application.
| Original language | English |
|---|---|
| Pages (from-to) | 87-94 |
| Number of pages | 8 |
| Journal | Integrated Ferroelectrics |
| Volume | 74 |
| DOIs | |
| State | Published - 2005 |
| Event | Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17 - Shanghai, China Duration: 17 Apr 2005 → 20 Apr 2005 |
Keywords
- Barium titanate
- E-beam evaporation
- Ion gun
- MLCC
- RTA
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