Properties of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition

Y. J. Li; Y. W. Heo; J. M. Erie; H. S. Kim; K. Ip; S. J. Pearton; D. P. Norton

doi:10.1117/12.615015

Properties of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition

Y. J. Li, Y. W. Heo, J. M. Erie, H. S. Kim, K. Ip, S. J. Pearton, D. P. Norton

University of Florida

Research output: Contribution to journal › Conference article › peer-review

Abstract

The room temperature transport and optical properties of phosphorus-doped ZnO and (Zn,Mg)O thin films are studied. Pulsed laser deposition (PLD) has been employed to grow epitaxial and polycrystalline layers on c-plane (0001) sapphire substrate. The ZnO:P film properties show a strong dependence on the deposition ambient at different growth temperatures. The resistivity of the samples deposited in O₃/O₂ mixture is two orders of magnitude higher than the films grown in oxygen and O₂/Ar/H₂ mixture. The photoluminescence (PL) spectra of the as-deposited films are composed of both the near band-edge and broadband visible emission, which peak at 3.29 and 1.87 eV, respectively. It has been shown that growing in the O ₂/Ar/H₂ mixture ambient significantly increases the band edge emission while inhibiting the visible emission. The opposite effect on the PL emissions is shown for the films grown in pure oxygen and O ₃/O₂ mixture. There is an inverse correlation between the intensity of the visible broadband emission and the carrier density. The enhanced UV emission in the films grown in O₂/Ar/H₂ mixture may result from hydrogen passivation of the deep level emission centers. For the P-doped (Zn,Mg)O grown at 500°C, increasing the oxygen partial pressure from 20 to 200 mTorr yields a carrier type conversion from n-type to p-type without post-annealing. The films grown at 150 mTorr oxygen partial pressure are p-type and exhibit a hole concentration of 2.7 × 10 ¹⁶ cm^-3, a mobility of 8.2 cm²/Vs and a resistivity of 35 Ω-cm. All the films exhibit good crystallinity with c-axis orientation. These results indicate the importance of oxidation conditions in realizing p-type (Zn,Mg)O:P films.

Original language	English
Article number	59411T
Pages (from-to)	1-9
Number of pages	9
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5941
DOIs	https://doi.org/10.1117/12.615015
State	Published - 2005
Event	Fifth International Conference on Solid State Lighting - San Diego, CA, United States Duration: 1 Aug 2005 → 4 Aug 2005

Keywords

(Zn,Mg)O
Phosphorus doped
Pulsed laser deposition
Wide bandgap semiconductor
Zinc oxide

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10.1117/12.615015

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title = "Properties of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition",

abstract = "The room temperature transport and optical properties of phosphorus-doped ZnO and (Zn,Mg)O thin films are studied. Pulsed laser deposition (PLD) has been employed to grow epitaxial and polycrystalline layers on c-plane (0001) sapphire substrate. The ZnO:P film properties show a strong dependence on the deposition ambient at different growth temperatures. The resistivity of the samples deposited in O3/O2 mixture is two orders of magnitude higher than the films grown in oxygen and O2/Ar/H2 mixture. The photoluminescence (PL) spectra of the as-deposited films are composed of both the near band-edge and broadband visible emission, which peak at 3.29 and 1.87 eV, respectively. It has been shown that growing in the O 2/Ar/H2 mixture ambient significantly increases the band edge emission while inhibiting the visible emission. The opposite effect on the PL emissions is shown for the films grown in pure oxygen and O 3/O2 mixture. There is an inverse correlation between the intensity of the visible broadband emission and the carrier density. The enhanced UV emission in the films grown in O2/Ar/H2 mixture may result from hydrogen passivation of the deep level emission centers. For the P-doped (Zn,Mg)O grown at 500°C, increasing the oxygen partial pressure from 20 to 200 mTorr yields a carrier type conversion from n-type to p-type without post-annealing. The films grown at 150 mTorr oxygen partial pressure are p-type and exhibit a hole concentration of 2.7 × 10 16 cm-3, a mobility of 8.2 cm2/Vs and a resistivity of 35 Ω-cm. All the films exhibit good crystallinity with c-axis orientation. These results indicate the importance of oxidation conditions in realizing p-type (Zn,Mg)O:P films.",

keywords = "(Zn,Mg)O, Phosphorus doped, Pulsed laser deposition, Wide bandgap semiconductor, Zinc oxide",

author = "Li, {Y. J.} and Heo, {Y. W.} and Erie, {J. M.} and Kim, {H. S.} and K. Ip and Pearton, {S. J.} and Norton, {D. P.}",

year = "2005",

doi = "10.1117/12.615015",

language = "English",

volume = "5941",

pages = "1--9",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Fifth International Conference on Solid State Lighting ; Conference date: 01-08-2005 Through 04-08-2005",

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TY - JOUR

T1 - Properties of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition

AU - Li, Y. J.

AU - Heo, Y. W.

AU - Erie, J. M.

AU - Kim, H. S.

AU - Ip, K.

AU - Pearton, S. J.

AU - Norton, D. P.

PY - 2005

Y1 - 2005

N2 - The room temperature transport and optical properties of phosphorus-doped ZnO and (Zn,Mg)O thin films are studied. Pulsed laser deposition (PLD) has been employed to grow epitaxial and polycrystalline layers on c-plane (0001) sapphire substrate. The ZnO:P film properties show a strong dependence on the deposition ambient at different growth temperatures. The resistivity of the samples deposited in O3/O2 mixture is two orders of magnitude higher than the films grown in oxygen and O2/Ar/H2 mixture. The photoluminescence (PL) spectra of the as-deposited films are composed of both the near band-edge and broadband visible emission, which peak at 3.29 and 1.87 eV, respectively. It has been shown that growing in the O 2/Ar/H2 mixture ambient significantly increases the band edge emission while inhibiting the visible emission. The opposite effect on the PL emissions is shown for the films grown in pure oxygen and O 3/O2 mixture. There is an inverse correlation between the intensity of the visible broadband emission and the carrier density. The enhanced UV emission in the films grown in O2/Ar/H2 mixture may result from hydrogen passivation of the deep level emission centers. For the P-doped (Zn,Mg)O grown at 500°C, increasing the oxygen partial pressure from 20 to 200 mTorr yields a carrier type conversion from n-type to p-type without post-annealing. The films grown at 150 mTorr oxygen partial pressure are p-type and exhibit a hole concentration of 2.7 × 10 16 cm-3, a mobility of 8.2 cm2/Vs and a resistivity of 35 Ω-cm. All the films exhibit good crystallinity with c-axis orientation. These results indicate the importance of oxidation conditions in realizing p-type (Zn,Mg)O:P films.

AB - The room temperature transport and optical properties of phosphorus-doped ZnO and (Zn,Mg)O thin films are studied. Pulsed laser deposition (PLD) has been employed to grow epitaxial and polycrystalline layers on c-plane (0001) sapphire substrate. The ZnO:P film properties show a strong dependence on the deposition ambient at different growth temperatures. The resistivity of the samples deposited in O3/O2 mixture is two orders of magnitude higher than the films grown in oxygen and O2/Ar/H2 mixture. The photoluminescence (PL) spectra of the as-deposited films are composed of both the near band-edge and broadband visible emission, which peak at 3.29 and 1.87 eV, respectively. It has been shown that growing in the O 2/Ar/H2 mixture ambient significantly increases the band edge emission while inhibiting the visible emission. The opposite effect on the PL emissions is shown for the films grown in pure oxygen and O 3/O2 mixture. There is an inverse correlation between the intensity of the visible broadband emission and the carrier density. The enhanced UV emission in the films grown in O2/Ar/H2 mixture may result from hydrogen passivation of the deep level emission centers. For the P-doped (Zn,Mg)O grown at 500°C, increasing the oxygen partial pressure from 20 to 200 mTorr yields a carrier type conversion from n-type to p-type without post-annealing. The films grown at 150 mTorr oxygen partial pressure are p-type and exhibit a hole concentration of 2.7 × 10 16 cm-3, a mobility of 8.2 cm2/Vs and a resistivity of 35 Ω-cm. All the films exhibit good crystallinity with c-axis orientation. These results indicate the importance of oxidation conditions in realizing p-type (Zn,Mg)O:P films.

KW - (Zn,Mg)O

KW - Phosphorus doped

KW - Pulsed laser deposition

KW - Wide bandgap semiconductor

KW - Zinc oxide

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U2 - 10.1117/12.615015

DO - 10.1117/12.615015

M3 - Conference article

AN - SCOPUS:31844448550

SN - 0277-786X

VL - 5941

SP - 1

EP - 9

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 59411T

T2 - Fifth International Conference on Solid State Lighting

Y2 - 1 August 2005 through 4 August 2005

ER -

Properties of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition

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Keywords

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