Proton implantation effects on electrical and recombination properties of undoped ZnO

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; E. A. Kozhukhova; V. I. Vdovin; K. Ip; M. E. Overberg; Y. W. Heo; D. P. Norton; S. J. Pearton; J. M. Zavada; V. A. Dravin

doi:10.1063/1.1597944

Proton implantation effects on electrical and recombination properties of undoped ZnO

A. Y. Polyakov
, N. B. Smirnov
, A. V. Govorkov
, E. A. Kozhukhova
, V. I. Vdovin
, K. Ip
, M. E. Overberg
, Y. W. Heo
, D. P. Norton
, S. J. Pearton
, J. M. Zavada
, V. A. Dravin

Institute of Rare Metals
University of Florida
United States Army Research Office
RAS - P.N. Lebedev Physics Institute

Research output: Contribution to journal › Article › peer-review

79 Scopus citations

Abstract

The proton implantation effects on electrical and recombination properties of undoped ZnO were studied. Photoluminescence (PL) spectra measurements showed a very strong decrease in PL intensity in all bands after heavy implantation with 100 keV protons. Three deep electron traps with apparent activation energies of 0.55, 0.75 and 0.9 eV were introduced by proton implantation.

Original language	English
Pages (from-to)	2895-2900
Number of pages	6
Journal	Journal of Applied Physics
Volume	94
Issue number	5
DOIs	https://doi.org/10.1063/1.1597944
State	Published - 1 Sep 2003

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title = "Proton implantation effects on electrical and recombination properties of undoped ZnO",

abstract = "The proton implantation effects on electrical and recombination properties of undoped ZnO were studied. Photoluminescence (PL) spectra measurements showed a very strong decrease in PL intensity in all bands after heavy implantation with 100 keV protons. Three deep electron traps with apparent activation energies of 0.55, 0.75 and 0.9 eV were introduced by proton implantation.",

author = "Polyakov, \{A. Y.\} and Smirnov, \{N. B.\} and Govorkov, \{A. V.\} and Kozhukhova, \{E. A.\} and Vdovin, \{V. I.\} and K. Ip and Overberg, \{M. E.\} and Heo, \{Y. W.\} and Norton, \{D. P.\} and Pearton, \{S. J.\} and Zavada, \{J. M.\} and Dravin, \{V. A.\}",

year = "2003",

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doi = "10.1063/1.1597944",

language = "English",

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T1 - Proton implantation effects on electrical and recombination properties of undoped ZnO

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Kozhukhova, E. A.

AU - Vdovin, V. I.

AU - Ip, K.

AU - Overberg, M. E.

AU - Heo, Y. W.

AU - Norton, D. P.

AU - Pearton, S. J.

AU - Zavada, J. M.

AU - Dravin, V. A.

PY - 2003/9/1

Y1 - 2003/9/1

N2 - The proton implantation effects on electrical and recombination properties of undoped ZnO were studied. Photoluminescence (PL) spectra measurements showed a very strong decrease in PL intensity in all bands after heavy implantation with 100 keV protons. Three deep electron traps with apparent activation energies of 0.55, 0.75 and 0.9 eV were introduced by proton implantation.

AB - The proton implantation effects on electrical and recombination properties of undoped ZnO were studied. Photoluminescence (PL) spectra measurements showed a very strong decrease in PL intensity in all bands after heavy implantation with 100 keV protons. Three deep electron traps with apparent activation energies of 0.55, 0.75 and 0.9 eV were introduced by proton implantation.

UR - https://www.scopus.com/pages/publications/0141522862

U2 - 10.1063/1.1597944

DO - 10.1063/1.1597944

M3 - Article

AN - SCOPUS:0141522862

SN - 0021-8979

VL - 94

SP - 2895

EP - 2900

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Proton implantation effects on electrical and recombination properties of undoped ZnO

Abstract

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