Pseudo-hexagonal in-plane alignment of rutile (100)Nb:TiO2 on hexagonal (0001)Al2O3 plane

Chaojun Wang; Joonghoe Dho; Sang Geul Lee

doi:10.1016/j.jcrysgro.2013.06.009

Pseudo-hexagonal in-plane alignment of rutile (100)Nb:TiO₂ on hexagonal (0001)Al₂O₃ plane

Chaojun Wang, Joonghoe Dho, Sang Geul Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Nb-doped TiO₂ (Nb:TiO₂) films were grown on a hexagonal (0001)Al₂O₃ substrate at 650 C and ∼10 ^-5 Torr. The Nb:TiO₂ film had a small resistivity of ∼8×10^-4 Ω cm at room temperature and a behavior of a slightly increasing resistance upon cooling. In addition, the Nb:TiO₂ film had an optical transmittance of about 60% in the visible range. A careful analysis of the in-plane atomic structure suggests that the rutile Nb:TiO ₂ film on the hexagonal (0001)Al₂O₃ can be re-interpreted by a certain pseudo-hexagonal structure, which is discriminated from the in-plane rectangular one of the tetragonal (100)Nb:TiO₂. The pseudo-hexagonal properties of the Nb:TiO₂ film were characterized by negligible mosaic structure at the interface, the same electron diffraction pattern as the hexagonal Al₂O₃ substrate, and perfect six-fold symmetries in the pole figure and φ-scan XRD patterns.

Original language	English
Pages (from-to)	118-122
Number of pages	5
Journal	Journal of Crystal Growth
Volume	380
DOIs	https://doi.org/10.1016/j.jcrysgro.2013.06.009
State	Published - 2013

Keywords

A3. Characterization
A3. Laser epitaxy
B1 Oxides
B1. Semiconducting materials

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10.1016/j.jcrysgro.2013.06.009

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@article{1d0146463aab4f3f83f1a669e26889ea,

title = "Pseudo-hexagonal in-plane alignment of rutile (100)Nb:TiO2 on hexagonal (0001)Al2O3 plane",

abstract = "Nb-doped TiO2 (Nb:TiO2) films were grown on a hexagonal (0001)Al2O3 substrate at 650 C and ∼10 -5 Torr. The Nb:TiO2 film had a small resistivity of ∼8×10-4 Ω cm at room temperature and a behavior of a slightly increasing resistance upon cooling. In addition, the Nb:TiO2 film had an optical transmittance of about 60% in the visible range. A careful analysis of the in-plane atomic structure suggests that the rutile Nb:TiO 2 film on the hexagonal (0001)Al2O3 can be re-interpreted by a certain pseudo-hexagonal structure, which is discriminated from the in-plane rectangular one of the tetragonal (100)Nb:TiO2. The pseudo-hexagonal properties of the Nb:TiO2 film were characterized by negligible mosaic structure at the interface, the same electron diffraction pattern as the hexagonal Al2O3 substrate, and perfect six-fold symmetries in the pole figure and φ-scan XRD patterns.",

keywords = "A3. Characterization, A3. Laser epitaxy, B1 Oxides, B1. Semiconducting materials",

author = "Chaojun Wang and Joonghoe Dho and Lee, {Sang Geul}",

year = "2013",

doi = "10.1016/j.jcrysgro.2013.06.009",

language = "English",

volume = "380",

pages = "118--122",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Pseudo-hexagonal in-plane alignment of rutile (100)Nb:TiO2 on hexagonal (0001)Al2O3 plane

AU - Wang, Chaojun

AU - Dho, Joonghoe

AU - Lee, Sang Geul

PY - 2013

Y1 - 2013

N2 - Nb-doped TiO2 (Nb:TiO2) films were grown on a hexagonal (0001)Al2O3 substrate at 650 C and ∼10 -5 Torr. The Nb:TiO2 film had a small resistivity of ∼8×10-4 Ω cm at room temperature and a behavior of a slightly increasing resistance upon cooling. In addition, the Nb:TiO2 film had an optical transmittance of about 60% in the visible range. A careful analysis of the in-plane atomic structure suggests that the rutile Nb:TiO 2 film on the hexagonal (0001)Al2O3 can be re-interpreted by a certain pseudo-hexagonal structure, which is discriminated from the in-plane rectangular one of the tetragonal (100)Nb:TiO2. The pseudo-hexagonal properties of the Nb:TiO2 film were characterized by negligible mosaic structure at the interface, the same electron diffraction pattern as the hexagonal Al2O3 substrate, and perfect six-fold symmetries in the pole figure and φ-scan XRD patterns.

AB - Nb-doped TiO2 (Nb:TiO2) films were grown on a hexagonal (0001)Al2O3 substrate at 650 C and ∼10 -5 Torr. The Nb:TiO2 film had a small resistivity of ∼8×10-4 Ω cm at room temperature and a behavior of a slightly increasing resistance upon cooling. In addition, the Nb:TiO2 film had an optical transmittance of about 60% in the visible range. A careful analysis of the in-plane atomic structure suggests that the rutile Nb:TiO 2 film on the hexagonal (0001)Al2O3 can be re-interpreted by a certain pseudo-hexagonal structure, which is discriminated from the in-plane rectangular one of the tetragonal (100)Nb:TiO2. The pseudo-hexagonal properties of the Nb:TiO2 film were characterized by negligible mosaic structure at the interface, the same electron diffraction pattern as the hexagonal Al2O3 substrate, and perfect six-fold symmetries in the pole figure and φ-scan XRD patterns.

KW - A3. Characterization

KW - A3. Laser epitaxy

KW - B1 Oxides

KW - B1. Semiconducting materials

UR - http://www.scopus.com/inward/record.url?scp=84879968048&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2013.06.009

DO - 10.1016/j.jcrysgro.2013.06.009

M3 - Article

AN - SCOPUS:84879968048

SN - 0022-0248

VL - 380

SP - 118

EP - 122

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Pseudo-hexagonal in-plane alignment of rutile (100)Nb:TiO₂ on hexagonal (0001)Al₂O₃ plane

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Keywords

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