Abstract
UV-ozone cleaning prior to metal deposition of either e-beam Pt contacts or sputtered W contacts on n-type single-crystal ZnO is found to significantly improve their rectifying characteristics. Pt contacts deposited directly on the as-received ZnO surface are Ohmic but show rectifying behavior with ozone cleaning. The Schottky barrier height of these Pt contacts was 0.70 eV, with ideality factor of 1.5 and a saturation current density of 6.2 × 10 -6 A·cm -2. In contrast, the as-deposited W contacts are Ohmic, independent of the use of ozone cleaning. Post-deposition annealing at 700°C produces rectifying behavior with Schottky barrier heights of 0.45 eV for control samples and 0.49 eV for those cleaned with ozone exposure. The improvement in rectifying properties of both the Pt contacts is related to removal of surface carbon contamination from the ZnO.
| Original language | English |
|---|---|
| Article number | B10.1 |
| Pages (from-to) | 479-484 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium Proceedings |
| Volume | 829 |
| State | Published - 2005 |
| Event | Progress in Compound Semiconductor Materials IV - Electronic and Optoelectronic Applications - Boston, MA, United States Duration: 29 Nov 2004 → 3 Dec 2004 |