Pt/ZnO nanowire Schottky diodes

Y. W. Heo; L. C. Tien; D. P. Norton; S. J. Pearton; B. S. Kang; F. Ren; J. R. LaRoche

doi:10.1063/1.1802372

Pt/ZnO nanowire Schottky diodes

Y. W. Heo, L. C. Tien, D. P. Norton, S. J. Pearton, B. S. Kang, F. Ren, J. R. LaRoche

University of Florida

Research output: Contribution to journal › Article › peer-review

142 Scopus citations

Abstract

Pt Schottky diodes were formed on single ZnO nanowires grown by site-selective molecular-beam epitaxy and then transferred to SiO ₂-coated Si substrates. The diodes exhibit excellent ideality factors of 1.1 at 25°C and very low (1.5 × 10 ^-10 A, equivalent to 2.35 A cm ^-2, at -10 V) reverse currents. The nanowire diodes show a strong photoresponse, with the current-voltage characteristics becoming ohmic under ultraviolet illumination (366 nm light). The on-off current ratio of the diodes at 0.15/-5 V was ∼6. These results show the ability to manipulate the electron transport in nanoscale ZnO devices.

Original language	English
Pages (from-to)	3107-3109
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	15
DOIs	https://doi.org/10.1063/1.1802372
State	Published - 11 Oct 2004

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title = "Pt/ZnO nanowire Schottky diodes",

abstract = "Pt Schottky diodes were formed on single ZnO nanowires grown by site-selective molecular-beam epitaxy and then transferred to SiO 2-coated Si substrates. The diodes exhibit excellent ideality factors of 1.1 at 25°C and very low (1.5 × 10 -10 A, equivalent to 2.35 A cm -2, at -10 V) reverse currents. The nanowire diodes show a strong photoresponse, with the current-voltage characteristics becoming ohmic under ultraviolet illumination (366 nm light). The on-off current ratio of the diodes at 0.15/-5 V was ∼6. These results show the ability to manipulate the electron transport in nanoscale ZnO devices.",

author = "Heo, {Y. W.} and Tien, {L. C.} and Norton, {D. P.} and Pearton, {S. J.} and Kang, {B. S.} and F. Ren and LaRoche, {J. R.}",

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T1 - Pt/ZnO nanowire Schottky diodes

AU - Heo, Y. W.

AU - Tien, L. C.

AU - Norton, D. P.

AU - Pearton, S. J.

AU - Kang, B. S.

AU - Ren, F.

AU - LaRoche, J. R.

PY - 2004/10/11

Y1 - 2004/10/11

N2 - Pt Schottky diodes were formed on single ZnO nanowires grown by site-selective molecular-beam epitaxy and then transferred to SiO 2-coated Si substrates. The diodes exhibit excellent ideality factors of 1.1 at 25°C and very low (1.5 × 10 -10 A, equivalent to 2.35 A cm -2, at -10 V) reverse currents. The nanowire diodes show a strong photoresponse, with the current-voltage characteristics becoming ohmic under ultraviolet illumination (366 nm light). The on-off current ratio of the diodes at 0.15/-5 V was ∼6. These results show the ability to manipulate the electron transport in nanoscale ZnO devices.

AB - Pt Schottky diodes were formed on single ZnO nanowires grown by site-selective molecular-beam epitaxy and then transferred to SiO 2-coated Si substrates. The diodes exhibit excellent ideality factors of 1.1 at 25°C and very low (1.5 × 10 -10 A, equivalent to 2.35 A cm -2, at -10 V) reverse currents. The nanowire diodes show a strong photoresponse, with the current-voltage characteristics becoming ohmic under ultraviolet illumination (366 nm light). The on-off current ratio of the diodes at 0.15/-5 V was ∼6. These results show the ability to manipulate the electron transport in nanoscale ZnO devices.

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VL - 85

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EP - 3109

JO - Applied Physics Letters

JF - Applied Physics Letters

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Pt/ZnO nanowire Schottky diodes

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