TY - GEN
T1 - Quantized conductive filament formed by limited Cu source in sub-5nm era
AU - Park, J.
AU - Lee, W.
AU - Choe, M.
AU - Jung, S.
AU - Son, M.
AU - Kim, S.
AU - Park, S.
AU - Shin, J.
AU - Lee, D.
AU - Siddik, M.
AU - Woo, J.
AU - Choi, G.
AU - Cha, E.
AU - Lee, T.
AU - Hwang, H.
PY - 2011
Y1 - 2011
N2 - For the first time, we have investigated the resistive switching characteristics in extreme size (sub-5nm) device. Less than 5nm effective electrode radius is confirmed by conductive-AFM and FIB-TEM analysis. The conductive filament source (Cu ions) is limited by applying novel fabrication technology. Due to the limited Cu source, we observe the quantized formation of conductive path, which results in the distinguishable conductance states and shows the feasibility of multi-bit operation. By controlling the motion of Cu ions precisely, ideal selection behavior for xpoint memory application was achieved.
AB - For the first time, we have investigated the resistive switching characteristics in extreme size (sub-5nm) device. Less than 5nm effective electrode radius is confirmed by conductive-AFM and FIB-TEM analysis. The conductive filament source (Cu ions) is limited by applying novel fabrication technology. Due to the limited Cu source, we observe the quantized formation of conductive path, which results in the distinguishable conductance states and shows the feasibility of multi-bit operation. By controlling the motion of Cu ions precisely, ideal selection behavior for xpoint memory application was achieved.
UR - https://www.scopus.com/pages/publications/84863052126
U2 - 10.1109/IEDM.2011.6131484
DO - 10.1109/IEDM.2011.6131484
M3 - Conference contribution
AN - SCOPUS:84863052126
SN - 9781457705052
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 3.7.1-3.7.4
BT - 2011 International Electron Devices Meeting, IEDM 2011
T2 - 2011 IEEE International Electron Devices Meeting, IEDM 2011
Y2 - 5 December 2011 through 7 December 2011
ER -