@inproceedings{19438972aed1478b8ccb89d6d0f3d139,
title = "Quantum capacitance in scaled down III-V FETs",
abstract = "We have built a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. We verified its validity with simulations (Nextnano) and experimental measurements on High Electron Mobility Transistors (HEMTs) with InAs and InGaAs channels down to 30 nm in gate length. Our model confirms that in the operational range of these devices, the quantum capacitance significantly lowers the overall gate capacitance. In addition, the channel centroid capacitance is also found to have a significant impact on gate capacitance. Our model provides a number of suggestions for capacitance scaling in future III-V FETs.",
author = "Donghyun Jin and Daehyun Kim and Taewoo Kim and {Del Alamo}, {Jes{\'u}s A.}",
year = "2009",
doi = "10.1109/IEDM.2009.5424312",
language = "English",
isbn = "9781424456406",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "20.4.1--20.4.4",
booktitle = "2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest",
note = "2009 International Electron Devices Meeting, IEDM 2009 ; Conference date: 07-12-2009 Through 09-12-2009",
}