Quenching of tunneling magnetoresistance at low temperatures

K. I. Lee; J. H. Lee; W. Y. Lee; K. H. Shin; H. C. Ri; B. C. Lee; K. Rhie

doi:10.1016/j.jmmm.2003.12.282

Quenching of tunneling magnetoresistance at low temperatures

K. I. Lee, J. H. Lee, W. Y. Lee, K. H. Shin, H. C. Ri, B. C. Lee, K. Rhie

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

It was observed that the tunneling magnetoresistance (TMR) was quenched at low temperatures for magnetic tunnel junctions fabricated with high-energy oxidation power. The unusual temperature dependence of the TMR is attributed to the spin-flip scattering at the interface.

Original language	English
Pages (from-to)	e1493-e1494
Journal	Journal of Magnetism and Magnetic Materials
Volume	272-276
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1016/j.jmmm.2003.12.282
State	Published - May 2004

Keywords

Magnetic tunnel junction
Tunneling magnetoresistance

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10.1016/j.jmmm.2003.12.282

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title = "Quenching of tunneling magnetoresistance at low temperatures",

abstract = "It was observed that the tunneling magnetoresistance (TMR) was quenched at low temperatures for magnetic tunnel junctions fabricated with high-energy oxidation power. The unusual temperature dependence of the TMR is attributed to the spin-flip scattering at the interface.",

keywords = "Magnetic tunnel junction, Tunneling magnetoresistance",

author = "Lee, {K. I.} and Lee, {J. H.} and Lee, {W. Y.} and Shin, {K. H.} and Ri, {H. C.} and Lee, {B. C.} and K. Rhie",

year = "2004",

month = may,

doi = "10.1016/j.jmmm.2003.12.282",

language = "English",

volume = "272-276",

pages = "e1493--e1494",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier B.V.",

number = "SUPPL. 1",

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T1 - Quenching of tunneling magnetoresistance at low temperatures

AU - Lee, K. I.

AU - Lee, J. H.

AU - Lee, W. Y.

AU - Shin, K. H.

AU - Ri, H. C.

AU - Lee, B. C.

AU - Rhie, K.

PY - 2004/5

Y1 - 2004/5

N2 - It was observed that the tunneling magnetoresistance (TMR) was quenched at low temperatures for magnetic tunnel junctions fabricated with high-energy oxidation power. The unusual temperature dependence of the TMR is attributed to the spin-flip scattering at the interface.

AB - It was observed that the tunneling magnetoresistance (TMR) was quenched at low temperatures for magnetic tunnel junctions fabricated with high-energy oxidation power. The unusual temperature dependence of the TMR is attributed to the spin-flip scattering at the interface.

KW - Magnetic tunnel junction

KW - Tunneling magnetoresistance

UR - http://www.scopus.com/inward/record.url?scp=23144457403&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2003.12.282

DO - 10.1016/j.jmmm.2003.12.282

M3 - Article

AN - SCOPUS:23144457403

SN - 0304-8853

VL - 272-276

SP - e1493-e1494

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - SUPPL. 1

ER -

Quenching of tunneling magnetoresistance at low temperatures

Abstract

Keywords

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