Quenching of tunneling magnetoresistance at low temperatures

K. I. Lee; J. H. Lee; W. Y. Lee; K. H. Shin; H. C. Ri; B. C. Lee; K. Rhie

doi:10.1016/j.jmmm.2003.12.282

Quenching of tunneling magnetoresistance at low temperatures

K. I. Lee
, J. H. Lee
, W. Y. Lee
, K. H. Shin
, H. C. Ri
, B. C. Lee
, K. Rhie

Department of Physics

Korea Institute of Science and Technology
Korea University
Yonsei University
Inha University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

It was observed that the tunneling magnetoresistance (TMR) was quenched at low temperatures for magnetic tunnel junctions fabricated with high-energy oxidation power. The unusual temperature dependence of the TMR is attributed to the spin-flip scattering at the interface.

Original language	English
Pages (from-to)	e1493-e1494
Journal	Journal of Magnetism and Magnetic Materials
Volume	272-276
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1016/j.jmmm.2003.12.282
State	Published - May 2004

Keywords

Magnetic tunnel junction
Tunneling magnetoresistance

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10.1016/j.jmmm.2003.12.282

Cite this

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title = "Quenching of tunneling magnetoresistance at low temperatures",

abstract = "It was observed that the tunneling magnetoresistance (TMR) was quenched at low temperatures for magnetic tunnel junctions fabricated with high-energy oxidation power. The unusual temperature dependence of the TMR is attributed to the spin-flip scattering at the interface.",

keywords = "Magnetic tunnel junction, Tunneling magnetoresistance",

author = "Lee, \{K. I.\} and Lee, \{J. H.\} and Lee, \{W. Y.\} and Shin, \{K. H.\} and Ri, \{H. C.\} and Lee, \{B. C.\} and K. Rhie",

year = "2004",

month = may,

doi = "10.1016/j.jmmm.2003.12.282",

language = "English",

volume = "272-276",

pages = "e1493--e1494",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier B.V.",

number = "SUPPL. 1",

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TY - JOUR

T1 - Quenching of tunneling magnetoresistance at low temperatures

AU - Lee, K. I.

AU - Lee, J. H.

AU - Lee, W. Y.

AU - Shin, K. H.

AU - Ri, H. C.

AU - Lee, B. C.

AU - Rhie, K.

PY - 2004/5

Y1 - 2004/5

N2 - It was observed that the tunneling magnetoresistance (TMR) was quenched at low temperatures for magnetic tunnel junctions fabricated with high-energy oxidation power. The unusual temperature dependence of the TMR is attributed to the spin-flip scattering at the interface.

AB - It was observed that the tunneling magnetoresistance (TMR) was quenched at low temperatures for magnetic tunnel junctions fabricated with high-energy oxidation power. The unusual temperature dependence of the TMR is attributed to the spin-flip scattering at the interface.

KW - Magnetic tunnel junction

KW - Tunneling magnetoresistance

UR - https://www.scopus.com/pages/publications/23144457403

U2 - 10.1016/j.jmmm.2003.12.282

DO - 10.1016/j.jmmm.2003.12.282

M3 - Article

AN - SCOPUS:23144457403

SN - 0304-8853

VL - 272-276

SP - e1493-e1494

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - SUPPL. 1

ER -

Quenching of tunneling magnetoresistance at low temperatures

Abstract

Keywords

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