Radiation damage study of AC-coupled silicon strip sensors with a proton beam

H. J. Hyun, D. H. Kah, H. D. Kang, H. J. Kim, S. H. Lee, H. Park, S. Ryu, Kyeryung Kim, Jinho Moon, Sangpil Yun

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We designed and fabricated AC-coupled silicon strip sensors that could be good detectors for X-ray imaging, particle detection, radiation monitoring, etc. Silicon sensors are known to have good position and energy resolution, but to be susceptible to radiation damage. Therefore, it is important to test the effects of radiation damage to the fabricated AC-coupled silicon strip sensors. For this purpose, the 45 MeV proton beam from the MC-50 cyclotron at the Korea Institute of Radiological and Medical Science (KIRAMS) in Seoul, Korea, was used. Four AC-coupled silicon strip sensors were exposed to 108 ∼ 1011 proton fluences, and the total leakage current was measured and analyzed by comparing the results before and after the proton beam irradiation, and essential progress in the understanding of radiation-induced detector deterioration is presented.

Original languageEnglish
Pages (from-to)1548-1551
Number of pages4
JournalJournal of the Korean Physical Society
Volume50
Issue number5 PART I
DOIs
StatePublished - May 2007

Keywords

  • KIRAMS
  • Proton beam
  • Radiation damage
  • Radiation hardness
  • Silicon strip sensors

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