Abstract
We present the result of a radiation hardness study for silicon strip sensors that was done by using 35-MeV proton beam from the MC-50 cyclotron at the Korea Institute of Radiological and Medical Sciences. In this study, we compare the leakage current of the sensors before and after the silicon sensors were irradiated by the proton beam.
| Original language | English |
|---|---|
| Pages (from-to) | 850-854 |
| Number of pages | 5 |
| Journal | Journal of the Korean Physical Society |
| Volume | 48 |
| Issue number | 4 I |
| State | Published - Apr 2006 |
Keywords
- 35-MeV proton beam
- Korea institute of radiological and medical sciences
- MC-50 cyclotron
- Radiation hardness
- Silicon strip sensors