TY - JOUR
T1 - Radio frequency performance of hetero-gate-dielectric tunneling field-effect transistors
AU - Kang, In Man
AU - Jang, Jung Shik
AU - Choi, Woo Young
PY - 2011/12
Y1 - 2011/12
N2 - Radio frequency (RF) performances of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) have been compared with those of SiO 2-only and high-k-only TFETs in terms of fT, f max, gate capacitance, channel resistance, and transconductance. HG TFETs can have higher fT=fmax and smaller switching time than SiO2-only TFETs and high-k-only TFETs because they have higher gm and current drivability than SiO2-only TFET and smaller gate capacitance than high-k-only TFET.
AB - Radio frequency (RF) performances of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) have been compared with those of SiO 2-only and high-k-only TFETs in terms of fT, f max, gate capacitance, channel resistance, and transconductance. HG TFETs can have higher fT=fmax and smaller switching time than SiO2-only TFETs and high-k-only TFETs because they have higher gm and current drivability than SiO2-only TFET and smaller gate capacitance than high-k-only TFET.
UR - http://www.scopus.com/inward/record.url?scp=82955178215&partnerID=8YFLogxK
U2 - 10.1143/JJAP.50.124301
DO - 10.1143/JJAP.50.124301
M3 - Article
AN - SCOPUS:82955178215
SN - 0021-4922
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 12
M1 - 124301
ER -