Radio frequency performance of hetero-gate-dielectric tunneling field-effect transistors

In Man Kang; Jung Shik Jang; Woo Young Choi

doi:10.1143/JJAP.50.124301

Radio frequency performance of hetero-gate-dielectric tunneling field-effect transistors

In Man Kang
, Jung Shik Jang
, Woo Young Choi

School of Electronics Engineering

Sogang University

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Radio frequency (RF) performances of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) have been compared with those of SiO ₂-only and high-k-only TFETs in terms of f_T, f _max, gate capacitance, channel resistance, and transconductance. HG TFETs can have higher f_T=f_max and smaller switching time than SiO₂-only TFETs and high-k-only TFETs because they have higher gm and current drivability than SiO₂-only TFET and smaller gate capacitance than high-k-only TFET.

Original language	English
Article number	124301
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	50
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.50.124301
State	Published - Dec 2011

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abstract = "Radio frequency (RF) performances of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) have been compared with those of SiO 2-only and high-k-only TFETs in terms of fT, f max, gate capacitance, channel resistance, and transconductance. HG TFETs can have higher fT=fmax and smaller switching time than SiO2-only TFETs and high-k-only TFETs because they have higher gm and current drivability than SiO2-only TFET and smaller gate capacitance than high-k-only TFET.",

author = "Kang, \{In Man\} and Jang, \{Jung Shik\} and Choi, \{Woo Young\}",

year = "2011",

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AU - Choi, Woo Young

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N2 - Radio frequency (RF) performances of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) have been compared with those of SiO 2-only and high-k-only TFETs in terms of fT, f max, gate capacitance, channel resistance, and transconductance. HG TFETs can have higher fT=fmax and smaller switching time than SiO2-only TFETs and high-k-only TFETs because they have higher gm and current drivability than SiO2-only TFET and smaller gate capacitance than high-k-only TFET.

AB - Radio frequency (RF) performances of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) have been compared with those of SiO 2-only and high-k-only TFETs in terms of fT, f max, gate capacitance, channel resistance, and transconductance. HG TFETs can have higher fT=fmax and smaller switching time than SiO2-only TFETs and high-k-only TFETs because they have higher gm and current drivability than SiO2-only TFET and smaller gate capacitance than high-k-only TFET.

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DO - 10.1143/JJAP.50.124301

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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ER -

Radio frequency performance of hetero-gate-dielectric tunneling field-effect transistors

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