Abstract
For the defective semiconductor SnO2 thin film epitaxially grown on sapphire, height-height correlation functions are evaluated from x-ray scattering and atomic force microscopy(AFM) by a quick method. The small value √G12(0) ≈ 1.67 Å implies that the interfaces are fairly well correlated. This is consistent with the well-defined oscillation in the longitudinal diffuse scattering intensity.
| Original language | English |
|---|---|
| Pages (from-to) | 1183-1187 |
| Number of pages | 5 |
| Journal | International Journal of Modern Physics B |
| Volume | 17 |
| Issue number | 8-9 I |
| DOIs | |
| State | Published - 10 Apr 2003 |