Recent progress in processing and properties of ZnO

S. J. Pearton; D. P. Norton; K. Ip; Y. W. Heo; T. Steiner

doi:10.1016/j.pmatsci.2004.04.001

Recent progress in processing and properties of ZnO

S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, T. Steiner

Research output: Contribution to journal › Review article › peer-review

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Abstract

ZnO is attracting considerable attention for its possible application to UV light emitters, spin functional devices, gas sensors, transparent electronics and surface acoustic wave devices. There is also interest in integrating ZnO with other wide bandgap ceramic semiconductors such as the AlInGaN system. In this paper we summarize recent progress in doping control, materials processing methods such as dry etching and Ohmic and Schottky contact formation, new understanding of the role of hydrogen and finally the prospects for control of ferromagnetism in transition-metal doped ZnO.

Original language	English
Pages (from-to)	293-340
Number of pages	48
Journal	Progress in Materials Science
Volume	50
Issue number	3
DOIs	https://doi.org/10.1016/j.pmatsci.2004.04.001
State	Published - Mar 2005

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title = "Recent progress in processing and properties of ZnO",

abstract = "ZnO is attracting considerable attention for its possible application to UV light emitters, spin functional devices, gas sensors, transparent electronics and surface acoustic wave devices. There is also interest in integrating ZnO with other wide bandgap ceramic semiconductors such as the AlInGaN system. In this paper we summarize recent progress in doping control, materials processing methods such as dry etching and Ohmic and Schottky contact formation, new understanding of the role of hydrogen and finally the prospects for control of ferromagnetism in transition-metal doped ZnO.",

author = "Pearton, {S. J.} and Norton, {D. P.} and K. Ip and Heo, {Y. W.} and T. Steiner",

year = "2005",

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AU - Pearton, S. J.

AU - Norton, D. P.

AU - Ip, K.

AU - Heo, Y. W.

AU - Steiner, T.

PY - 2005/3

Y1 - 2005/3

N2 - ZnO is attracting considerable attention for its possible application to UV light emitters, spin functional devices, gas sensors, transparent electronics and surface acoustic wave devices. There is also interest in integrating ZnO with other wide bandgap ceramic semiconductors such as the AlInGaN system. In this paper we summarize recent progress in doping control, materials processing methods such as dry etching and Ohmic and Schottky contact formation, new understanding of the role of hydrogen and finally the prospects for control of ferromagnetism in transition-metal doped ZnO.

AB - ZnO is attracting considerable attention for its possible application to UV light emitters, spin functional devices, gas sensors, transparent electronics and surface acoustic wave devices. There is also interest in integrating ZnO with other wide bandgap ceramic semiconductors such as the AlInGaN system. In this paper we summarize recent progress in doping control, materials processing methods such as dry etching and Ohmic and Schottky contact formation, new understanding of the role of hydrogen and finally the prospects for control of ferromagnetism in transition-metal doped ZnO.

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U2 - 10.1016/j.pmatsci.2004.04.001

DO - 10.1016/j.pmatsci.2004.04.001

M3 - Review article

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SN - 0079-6425

VL - 50

SP - 293

EP - 340

JO - Progress in Materials Science

JF - Progress in Materials Science

IS - 3

ER -

Recent progress in processing and properties of ZnO

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