Recessed-gate normally-off gan mosfet technologies

Ki Sik Im, Ki Won Kim, Dong Seok Kim, Hee Sung Kang, Do Kywn Kim, Sung Jae Chang, Young Ho Bae, Sung Ho Hahm, Sorin Cristoloveanu, Jung Hee Lee

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We have fabricated and investigated several types of GaN MOSFETs with normally-off operation. The recessed-gate GaN MOSFET is preferred for normally-off operation, because the threshold voltage (Vth) of the device can be easily controlled, but it suffers from relatively modest current drivability which must be improved by adopting appropriate device structure and/or process. Enhanced performances have been achieved in this work by combining the recessed-gate technology with additional processes, such as: the post-recess tetramethylammonium hydroxide (TMAH) treatment to remove the plasma damage, the post-deposition annealing of gate oxide to decrease the gate leakage current, the re-growth of n+ GaN layer for source/drain to improve the access resistance and Vth uniformity, the stress control technology to achieve extremely high 2-D electron-gas density (2DEG) on source/drain and decrease the series resistance, and the use of the p-GaN back-barrier to decrease the buffer leakage current. The GaN-based FinFET with very narrow fin was also investigated as a possible candidate for high performance normally-off GaN MOSFETs.

Original languageEnglish
Article number1250007
JournalInternational Journal of High Speed Electronics and Systems
Volume21
Issue number1
DOIs
StatePublished - Mar 2012

Keywords

  • 2DEG
  • Al O
  • Buffer
  • FinFET
  • GaN
  • HFET
  • MISFET
  • MOCVD
  • MOSFET
  • Normally-off
  • TMAH

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