Record effective mobility obtained from In0.53Ga0.47As/In0.52Al0.48as quantum-well MOSFETs on 300-mm si substrate

Seung Woo Son; Jung Ho Park; Ji Min Baek; Do Kwyn Kim; Seung Ryul Lee; Sang Moon Lee; Jieon Yoon; Jungtaek Kim; Woo Bin Song; Sunjung Kim; Dong Suk Shin; Yihwan Kim; Seung Heon Shin; Tae Woo Kim; Jung Hee Lee; Dae Hyun Kim

doi:10.1109/LED.2017.2695652

Record effective mobility obtained from In_0.53Ga_0.47As/In_0.52Al_0.48as quantum-well MOSFETs on 300-mm si substrate

Seung Woo Son, Jung Ho Park, Ji Min Baek, Do Kwyn Kim, Seung Ryul Lee, Sang Moon Lee, Jieon Yoon, Jungtaek Kim, Woo Bin Song, Sunjung Kim, Dong Suk Shin, Yihwan Kim, Seung Heon Shin, Tae Woo Kim, Jung Hee Lee, Dae Hyun Kim

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

In this letter, we have investigated the properties of In_0.53Ga_0.47As quantum-well (QW) metal-oxide- semiconductor field-effect-transistors (MOSFETs) on a 300-mm(100) Si wafer.We have explored the impact of scaling down In_0.53Ga_0.47As channel thickness (tch) from 15 to 5 nm. The fabricated devices show excellent electrostatic integrity, such as subthreshold-swing (SS) < 80 mV/decade and drain-induced barrier-lower (DIBL) < 20 mV/V. Furthermore, we have extracted the effective mobility (μn-eff) of the fabricated devices to investigate the carrier transport properties of the InGaAs MOSFETs with different values of tch. The device with tch = 15 nm displayed a value of μn-eff = 2, 190 cm²/V-s at room temperature. This valuewas found to decrease as tch was scaled down.

Original language	English
Article number	7904702
Pages (from-to)	724-727
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	38
Issue number	6
DOIs	https://doi.org/10.1109/LED.2017.2695652
State	Published - Jun 2017

Keywords

effective mobility (μn-eff)
electrostatic integrity
InGaAs MOSFET
InGaAs on Si.
subthreshold-swing (SS)

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Son, S. W., Park, J. H., Baek, J. M., Kim, D. K., Lee, S. R., Lee, S. M., Yoon, J., Kim, J., Song, W. B., Kim, S., Shin, D. S., Kim, Y., Shin, S. H., Kim, T. W., Lee, J. H., & Kim, D. H. (2017). Record effective mobility obtained from In_0.53Ga_0.47As/In_0.52Al_0.48as quantum-well MOSFETs on 300-mm si substrate. IEEE Electron Device Letters, 38(6), 724-727. Article 7904702. https://doi.org/10.1109/LED.2017.2695652

@article{b39264faa7634511a89dc4aade052422,

title = "Record effective mobility obtained from In0.53Ga0.47As/In0.52Al0.48as quantum-well MOSFETs on 300-mm si substrate",

abstract = "In this letter, we have investigated the properties of In0.53Ga0.47As quantum-well (QW) metal-oxide- semiconductor field-effect-transistors (MOSFETs) on a 300-mm(100) Si wafer.We have explored the impact of scaling down In0.53Ga0.47As channel thickness (tch) from 15 to 5 nm. The fabricated devices show excellent electrostatic integrity, such as subthreshold-swing (SS) < 80 mV/decade and drain-induced barrier-lower (DIBL) < 20 mV/V. Furthermore, we have extracted the effective mobility (μn-eff) of the fabricated devices to investigate the carrier transport properties of the InGaAs MOSFETs with different values of tch. The device with tch = 15 nm displayed a value of μn-eff = 2, 190 cm2/V-s at room temperature. This valuewas found to decrease as tch was scaled down.",

keywords = "effective mobility (μn-eff), electrostatic integrity, InGaAs MOSFET, InGaAs on Si., subthreshold-swing (SS)",

author = "Son, {Seung Woo} and Park, {Jung Ho} and Baek, {Ji Min} and Kim, {Do Kwyn} and Lee, {Seung Ryul} and Lee, {Sang Moon} and Jieon Yoon and Jungtaek Kim and Song, {Woo Bin} and Sunjung Kim and Shin, {Dong Suk} and Yihwan Kim and Shin, {Seung Heon} and Kim, {Tae Woo} and Lee, {Jung Hee} and Kim, {Dae Hyun}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.",

year = "2017",

month = jun,

doi = "10.1109/LED.2017.2695652",

language = "English",

volume = "38",

pages = "724--727",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Son, SW, Park, JH, Baek, JM, Kim, DK, Lee, SR, Lee, SM, Yoon, J, Kim, J, Song, WB, Kim, S, Shin, DS, Kim, Y, Shin, SH, Kim, TW, Lee, JH & Kim, DH 2017, 'Record effective mobility obtained from In_0.53Ga_0.47As/In_0.52Al_0.48as quantum-well MOSFETs on 300-mm si substrate', IEEE Electron Device Letters, vol. 38, no. 6, 7904702, pp. 724-727. https://doi.org/10.1109/LED.2017.2695652

TY - JOUR

T1 - Record effective mobility obtained from In0.53Ga0.47As/In0.52Al0.48as quantum-well MOSFETs on 300-mm si substrate

AU - Son, Seung Woo

AU - Park, Jung Ho

AU - Baek, Ji Min

AU - Kim, Do Kwyn

AU - Lee, Seung Ryul

AU - Lee, Sang Moon

AU - Yoon, Jieon

AU - Kim, Jungtaek

AU - Song, Woo Bin

AU - Kim, Sunjung

AU - Shin, Dong Suk

AU - Kim, Yihwan

AU - Shin, Seung Heon

AU - Kim, Tae Woo

AU - Lee, Jung Hee

AU - Kim, Dae Hyun

PY - 2017/6

Y1 - 2017/6

N2 - In this letter, we have investigated the properties of In0.53Ga0.47As quantum-well (QW) metal-oxide- semiconductor field-effect-transistors (MOSFETs) on a 300-mm(100) Si wafer.We have explored the impact of scaling down In0.53Ga0.47As channel thickness (tch) from 15 to 5 nm. The fabricated devices show excellent electrostatic integrity, such as subthreshold-swing (SS) < 80 mV/decade and drain-induced barrier-lower (DIBL) < 20 mV/V. Furthermore, we have extracted the effective mobility (μn-eff) of the fabricated devices to investigate the carrier transport properties of the InGaAs MOSFETs with different values of tch. The device with tch = 15 nm displayed a value of μn-eff = 2, 190 cm2/V-s at room temperature. This valuewas found to decrease as tch was scaled down.

AB - In this letter, we have investigated the properties of In0.53Ga0.47As quantum-well (QW) metal-oxide- semiconductor field-effect-transistors (MOSFETs) on a 300-mm(100) Si wafer.We have explored the impact of scaling down In0.53Ga0.47As channel thickness (tch) from 15 to 5 nm. The fabricated devices show excellent electrostatic integrity, such as subthreshold-swing (SS) < 80 mV/decade and drain-induced barrier-lower (DIBL) < 20 mV/V. Furthermore, we have extracted the effective mobility (μn-eff) of the fabricated devices to investigate the carrier transport properties of the InGaAs MOSFETs with different values of tch. The device with tch = 15 nm displayed a value of μn-eff = 2, 190 cm2/V-s at room temperature. This valuewas found to decrease as tch was scaled down.

KW - effective mobility (μn-eff)

KW - electrostatic integrity

KW - InGaAs MOSFET

KW - InGaAs on Si.

KW - subthreshold-swing (SS)

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U2 - 10.1109/LED.2017.2695652

DO - 10.1109/LED.2017.2695652

M3 - Article

AN - SCOPUS:85021705725

SN - 0741-3106

VL - 38

SP - 724

EP - 727

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

M1 - 7904702

ER -

Record effective mobility obtained from In_0.53Ga_0.47As/In_0.52Al_0.48as quantum-well MOSFETs on 300-mm si substrate

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Keywords

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