Relationship between effective mobility and border traps associated with charge trapping in In_0.7Ga_0.3As MOSFETs with various high-κ stacks

Material Science

• Al2O3 100%
• Charge Trapping 100%
• Density 40%
• Dielectric Material 20%
• Field Effect Transistor 20%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Oxide Compound 20%
• Oxygen Vacancy 20%
• Quantum Well 20%

Engineering

• Dielectrics 33%
• Field Effect Transistor 33%
• Gate Stack 33%
• Interface Trap 33%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Oxygen Vacancy 33%
• Quantum Well 33%