Abstract
A promising release technique for SU-8 using a water-soluble sacrificial layer based on germanium oxide is developed. The relatively high etching rate of germanium oxide in water and its high etching selectivity make it suitable as a sacrificial layer for the release of SU-8 structures. Moreover, a water-soluble sacrificial layer causes no damage to either the structural materials or SU-8 because it can be etched under much milder conditions. To demonstrate the effectiveness of a water-soluble sacrificial layer for releasing SU-8 structures, a large-area SU-8 structure is released using this approach. In addition, various microfabrication processes are demonstrated using releasable SU-8 structures: a metal lift-off process using SU-8 as a lift-off mask, fabrication of thick metal microstructures using SU-8 as a mold, and fabrication of a free-standing SU-8 micromixer.
Original language | English |
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Pages (from-to) | 49-54 |
Number of pages | 6 |
Journal | Microelectronic Engineering |
Volume | 172 |
DOIs | |
State | Published - 25 Mar 2017 |
Keywords
- Germanium oxide
- Sacrificial layer
- SU-8