Reliability characterization of advanced CMOS image sensor (CIS) with 3D stack and in-pixel DTI

Younggeun Ji, Jeonghoon Kim, Jungin Kim, Miji Lee, Jaeheon Noh, Taeyoung Jeong, Juhyeon Shin, Junho Kim, Young Heo, Ung Cho, Hyunchul Sagong, Junekyun Park, Yeonsik Choo, Gilhwan Do, Hoyoung Kang, Eunkyeong Choi, Dongyoon Sun, Changki Kang, Sangchul Shin, Sangwoo Pae

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Due to the advancement of CMOS image sensors (CIS), camera module on the mobile platform has paved way for very high quality photos and video shooting capability. In order to improve picture quality, the CIS technology has been also scaling aggressively to provide more Mega-Pixels (MP) but it also must be less susceptible and immune to noise sources, particle and defect-free, and highly reliable. In this report, we'll discuss the reliability characterization done on the 3D stack sensor with in-pixel DTI. By optimization of both process and design, noise immune and very high quality advanced CIS products have been successfully qualified and manufactured for volume production.

Original languageEnglish
Title of host publication2018 IEEE International Reliability Physics Symposium, IRPS 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3D.31-3D.34
ISBN (Electronic)9781538654798
DOIs
StatePublished - 25 May 2018
Event2018 IEEE International Reliability Physics Symposium, IRPS 2018 - Burlingame, United States
Duration: 11 Mar 201815 Mar 2018

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2018-March
ISSN (Print)1541-7026

Conference

Conference2018 IEEE International Reliability Physics Symposium, IRPS 2018
Country/TerritoryUnited States
CityBurlingame
Period11/03/1815/03/18

Keywords

  • CMOS Image Sensor (CIS)
  • Dark noise
  • HTOL
  • Particle
  • Production
  • RTS
  • Reliability

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