Resistance switching characteristics of solid electrolyte chalcogenide Ag2Se nanoparticles for flexible nonvolatile memory applications

Jaewon Jang, Feng Pan, Kyle Braam, Vivek Subramanian

Research output: Contribution to journalArticlepeer-review

110 Scopus citations

Abstract

Solution-processed mechanically flexible resistive random access memories are fabricated using Ag2Se nanoparticles; the fabricated Ag/Ag 2Se/Au memory devices on flexible poly-ethylene-naphthalate substrates show bipolar switching memory characteristics, with low voltage (<1.5 V) operation, no significant retention loss after 105 s, and no degradation in endurance after 104 switching cycles, with stable operation even under a mechanical strain of 0.38%.

Original languageEnglish
Pages (from-to)3573-3576
Number of pages4
JournalAdvanced Materials
Volume24
Issue number26
DOIs
StatePublished - 10 Jul 2012

Keywords

  • AgSe nanoparticles
  • flexible electronics
  • non-volatile memory
  • resistance switching
  • solution process

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