Abstract
Solution-processed mechanically flexible resistive random access memories are fabricated using Ag2Se nanoparticles; the fabricated Ag/Ag 2Se/Au memory devices on flexible poly-ethylene-naphthalate substrates show bipolar switching memory characteristics, with low voltage (<1.5 V) operation, no significant retention loss after 105 s, and no degradation in endurance after 104 switching cycles, with stable operation even under a mechanical strain of 0.38%.
Original language | English |
---|---|
Pages (from-to) | 3573-3576 |
Number of pages | 4 |
Journal | Advanced Materials |
Volume | 24 |
Issue number | 26 |
DOIs | |
State | Published - 10 Jul 2012 |
Keywords
- AgSe nanoparticles
- flexible electronics
- non-volatile memory
- resistance switching
- solution process