Resistive and photocurrent switching behaviors of a flexible VO₂/mica device fabricated via laser ablation patterning

We fabricated flexible resistive and photocurrent switching devices based on VO₂ films grown on a 3-μm-thick mica substrate using a laser ablation patterning process, enabled by the unique thermal and electrical insulating properties of mica. We confirmed that the metal-insulator transition characteristics of the VO₂ film grown on the mica substrate remained stable under outward and inward bending deformations, with curvature κ ranging from +0.2 mm⁻¹ to −0.2 mm⁻¹. The flexible VO₂ devices demonstrated stable and fast resistive switching performances even at low voltages. Additionally, the devices generated a photocurrent proportional to the light intensity at low bias voltages. Notably, we demonstrated that the photocurrent switching behavior of the flexible VO₂ device can be adjusted using pulsed-voltage measurements. These results suggest that the flexible VO₂/mica device, fabricated via a laser ablation patterning process, provides a cost-effective and straightforward approach for developing flexible VO₂-based resistive memory and optoelectronic devices.