Retention, disturb and variability improvements enabled by local chemical-potential tuning and controlled Hour-Glass filament shape in a novel W\WO3\Al2O3\Cu CBRAM

L. Goux; A. Belmonte; U. Celano; J. Woo; S. Folkersma; C. Y. Chen; A. Redolfi; A. Fantini; R. Degraeve; S. Clima; W. Vandervorst; M. Jurczak

doi:10.1109/VLSIT.2016.7573404

Retention, disturb and variability improvements enabled by local chemical-potential tuning and controlled Hour-Glass filament shape in a novel W\WO₃\Al₂O₃\Cu CBRAM

L. Goux, A. Belmonte, U. Celano, J. Woo, S. Folkersma, C. Y. Chen, A. Redolfi, A. Fantini, R. Degraeve, S. Clima, W. Vandervorst, M. Jurczak

School of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

13 Scopus citations

Abstract

We optimize a novel W\WO₃\Al₂O₃\Cu CBRAM cell allowing excellent control of Hour-Glass (HG) shaped Conductive Filament (CF), improving switching variability, disturb and retention at low current. We evidence for the first time the critical impact of the Cu chemical potential close to the HG constriction on state retention.

Original language	English
Title of host publication	2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509006373
DOIs	https://doi.org/10.1109/VLSIT.2016.7573404
State	Published - 21 Sep 2016
Event	36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 - Honolulu, United States Duration: 13 Jun 2016 → 16 Jun 2016

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2016-September
ISSN (Print)	0743-1562

Conference

Conference	36th IEEE Symposium on VLSI Technology, VLSI Technology 2016
Country/Territory	United States
City	Honolulu
Period	13/06/16 → 16/06/16

Access to Document

10.1109/VLSIT.2016.7573404

Cite this

Goux, L., Belmonte, A., Celano, U., Woo, J., Folkersma, S., Chen, C. Y., Redolfi, A., Fantini, A., Degraeve, R., Clima, S., Vandervorst, W., & Jurczak, M. (2016). Retention, disturb and variability improvements enabled by local chemical-potential tuning and controlled Hour-Glass filament shape in a novel W\WO₃\Al₂O₃\Cu CBRAM. In 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016 Article 7573404 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2016-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2016.7573404

Goux, L. ; Belmonte, A. ; Celano, U. et al. / Retention, disturb and variability improvements enabled by local chemical-potential tuning and controlled Hour-Glass filament shape in a novel W\WO₃\Al₂O₃\Cu CBRAM. 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (Digest of Technical Papers - Symposium on VLSI Technology).

@inproceedings{35ceda10039f44ae9282630870fabfe1,

title = "Retention, disturb and variability improvements enabled by local chemical-potential tuning and controlled Hour-Glass filament shape in a novel W\textbackslash{}WO3\textbackslash{}Al2O3\textbackslash{}Cu CBRAM",

abstract = "We optimize a novel W\textbackslash{}WO3\textbackslash{}Al2O3\textbackslash{}Cu CBRAM cell allowing excellent control of Hour-Glass (HG) shaped Conductive Filament (CF), improving switching variability, disturb and retention at low current. We evidence for the first time the critical impact of the Cu chemical potential close to the HG constriction on state retention.",

author = "L. Goux and A. Belmonte and U. Celano and J. Woo and S. Folkersma and Chen, \{C. Y.\} and A. Redolfi and A. Fantini and R. Degraeve and S. Clima and W. Vandervorst and M. Jurczak",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 ; Conference date: 13-06-2016 Through 16-06-2016",

year = "2016",

month = sep,

day = "21",

doi = "10.1109/VLSIT.2016.7573404",

language = "English",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016",

address = "United States",

}

Goux, L, Belmonte, A, Celano, U, Woo, J, Folkersma, S, Chen, CY, Redolfi, A, Fantini, A, Degraeve, R, Clima, S, Vandervorst, W & Jurczak, M 2016, Retention, disturb and variability improvements enabled by local chemical-potential tuning and controlled Hour-Glass filament shape in a novel W\WO₃\Al₂O₃\Cu CBRAM. in 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016., 7573404, Digest of Technical Papers - Symposium on VLSI Technology, vol. 2016-September, Institute of Electrical and Electronics Engineers Inc., 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016, Honolulu, United States, 13/06/16. https://doi.org/10.1109/VLSIT.2016.7573404

Retention, disturb and variability improvements enabled by local chemical-potential tuning and controlled Hour-Glass filament shape in a novel W\WO₃\Al₂O₃\Cu CBRAM. / Goux, L.; Belmonte, A.; Celano, U. et al.
2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7573404 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2016-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Retention, disturb and variability improvements enabled by local chemical-potential tuning and controlled Hour-Glass filament shape in a novel W\WO3\Al2O3\Cu CBRAM

AU - Goux, L.

AU - Belmonte, A.

AU - Celano, U.

AU - Woo, J.

AU - Folkersma, S.

AU - Chen, C. Y.

AU - Redolfi, A.

AU - Fantini, A.

AU - Degraeve, R.

AU - Clima, S.

AU - Vandervorst, W.

AU - Jurczak, M.

PY - 2016/9/21

Y1 - 2016/9/21

N2 - We optimize a novel W\WO3\Al2O3\Cu CBRAM cell allowing excellent control of Hour-Glass (HG) shaped Conductive Filament (CF), improving switching variability, disturb and retention at low current. We evidence for the first time the critical impact of the Cu chemical potential close to the HG constriction on state retention.

AB - We optimize a novel W\WO3\Al2O3\Cu CBRAM cell allowing excellent control of Hour-Glass (HG) shaped Conductive Filament (CF), improving switching variability, disturb and retention at low current. We evidence for the first time the critical impact of the Cu chemical potential close to the HG constriction on state retention.

UR - https://www.scopus.com/pages/publications/84990924187

U2 - 10.1109/VLSIT.2016.7573404

DO - 10.1109/VLSIT.2016.7573404

M3 - Conference contribution

AN - SCOPUS:84990924187

T3 - Digest of Technical Papers - Symposium on VLSI Technology

BT - 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016

Y2 - 13 June 2016 through 16 June 2016

ER -

Goux L, Belmonte A, Celano U, Woo J, Folkersma S, Chen CY et al. Retention, disturb and variability improvements enabled by local chemical-potential tuning and controlled Hour-Glass filament shape in a novel W\WO₃\Al₂O₃\Cu CBRAM. In 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7573404. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSIT.2016.7573404