RF model of 3-RC network structure for metal-insulator-metal capacitor

I. M. Kang; T. H. Choi; J. H. Joe; S. J. Jung; J. Jung; H. Lee; G. Jo; Y. K. Kim; H. G. Kim; K. M. Choi

doi:10.1049/el:20081339

RF model of 3-RC network structure for metal-insulator-metal capacitor

I. M. Kang, T. H. Choi, J. H. Joe, S. J. Jung, J. Jung, H. Lee, G. Jo, Y. K. Kim, H. G. Kim, K. M. Choi

Samsung

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A radio-frequency (RF) equivalent circuit model for the metal-insulator-metal (MIM) capacitor with both side bottom plate contact is presented. The proposed model consists of 3-distributed RC networks and substrate networks. The accuracy of the MIM capacitor model is verified for Z-parameters, effective capacitance (C_eff), quality factor (Q), and MIM capacitor impedance (Z_c) up to 20GHz. The effects of substrate network components on MIM's frequency characteristics are also analysed through Z-parameters. Finally, the cutoff frequency of the MIM is extracted from Q-factor and Z_c.

Original language	English
Pages (from-to)	1140-1141
Number of pages	2
Journal	Electronics Letters
Volume	44
Issue number	19
DOIs	https://doi.org/10.1049/el:20081339
State	Published - 2008

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10.1049/el:20081339

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title = "RF model of 3-RC network structure for metal-insulator-metal capacitor",

abstract = "A radio-frequency (RF) equivalent circuit model for the metal-insulator-metal (MIM) capacitor with both side bottom plate contact is presented. The proposed model consists of 3-distributed RC networks and substrate networks. The accuracy of the MIM capacitor model is verified for Z-parameters, effective capacitance (Ceff), quality factor (Q), and MIM capacitor impedance (Zc) up to 20GHz. The effects of substrate network components on MIM's frequency characteristics are also analysed through Z-parameters. Finally, the cutoff frequency of the MIM is extracted from Q-factor and Zc.",

author = "Kang, {I. M.} and Choi, {T. H.} and Joe, {J. H.} and Jung, {S. J.} and J. Jung and H. Lee and G. Jo and Kim, {Y. K.} and Kim, {H. G.} and Choi, {K. M.}",

year = "2008",

doi = "10.1049/el:20081339",

language = "English",

volume = "44",

pages = "1140--1141",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

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TY - JOUR

T1 - RF model of 3-RC network structure for metal-insulator-metal capacitor

AU - Kang, I. M.

AU - Choi, T. H.

AU - Joe, J. H.

AU - Jung, S. J.

AU - Jung, J.

AU - Lee, H.

AU - Jo, G.

AU - Kim, Y. K.

AU - Kim, H. G.

AU - Choi, K. M.

PY - 2008

Y1 - 2008

N2 - A radio-frequency (RF) equivalent circuit model for the metal-insulator-metal (MIM) capacitor with both side bottom plate contact is presented. The proposed model consists of 3-distributed RC networks and substrate networks. The accuracy of the MIM capacitor model is verified for Z-parameters, effective capacitance (Ceff), quality factor (Q), and MIM capacitor impedance (Zc) up to 20GHz. The effects of substrate network components on MIM's frequency characteristics are also analysed through Z-parameters. Finally, the cutoff frequency of the MIM is extracted from Q-factor and Zc.

AB - A radio-frequency (RF) equivalent circuit model for the metal-insulator-metal (MIM) capacitor with both side bottom plate contact is presented. The proposed model consists of 3-distributed RC networks and substrate networks. The accuracy of the MIM capacitor model is verified for Z-parameters, effective capacitance (Ceff), quality factor (Q), and MIM capacitor impedance (Zc) up to 20GHz. The effects of substrate network components on MIM's frequency characteristics are also analysed through Z-parameters. Finally, the cutoff frequency of the MIM is extracted from Q-factor and Zc.

UR - http://www.scopus.com/inward/record.url?scp=51549097747&partnerID=8YFLogxK

U2 - 10.1049/el:20081339

DO - 10.1049/el:20081339

M3 - Article

AN - SCOPUS:51549097747

SN - 0013-5194

VL - 44

SP - 1140

EP - 1141

JO - Electronics Letters

JF - Electronics Letters

IS - 19

ER -

RF model of 3-RC network structure for metal-insulator-metal capacitor

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