RF model of 3-RC network structure for metal-insulator-metal capacitor

I. M. Kang; T. H. Choi; J. H. Joe; S. J. Jung; J. Jung; H. Lee; G. Jo; Y. K. Kim; H. G. Kim; K. M. Choi

doi:10.1049/el:20081339

RF model of 3-RC network structure for metal-insulator-metal capacitor

I. M. Kang
, T. H. Choi
, J. H. Joe
, S. J. Jung
, J. Jung
, H. Lee
, G. Jo
, Y. K. Kim
, H. G. Kim
, K. M. Choi

Samsung

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A radio-frequency (RF) equivalent circuit model for the metal-insulator-metal (MIM) capacitor with both side bottom plate contact is presented. The proposed model consists of 3-distributed RC networks and substrate networks. The accuracy of the MIM capacitor model is verified for Z-parameters, effective capacitance (C_eff), quality factor (Q), and MIM capacitor impedance (Z_c) up to 20GHz. The effects of substrate network components on MIM's frequency characteristics are also analysed through Z-parameters. Finally, the cutoff frequency of the MIM is extracted from Q-factor and Z_c.

Original language	English
Pages (from-to)	1140-1141
Number of pages	2
Journal	Electronics Letters
Volume	44
Issue number	19
DOIs	https://doi.org/10.1049/el:20081339
State	Published - 2008

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10.1049/el:20081339

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@article{54e04e3f0c114edca1b52fa90e2c86c1,

title = "RF model of 3-RC network structure for metal-insulator-metal capacitor",

abstract = "A radio-frequency (RF) equivalent circuit model for the metal-insulator-metal (MIM) capacitor with both side bottom plate contact is presented. The proposed model consists of 3-distributed RC networks and substrate networks. The accuracy of the MIM capacitor model is verified for Z-parameters, effective capacitance (Ceff), quality factor (Q), and MIM capacitor impedance (Zc) up to 20GHz. The effects of substrate network components on MIM's frequency characteristics are also analysed through Z-parameters. Finally, the cutoff frequency of the MIM is extracted from Q-factor and Zc.",

author = "Kang, \{I. M.\} and Choi, \{T. H.\} and Joe, \{J. H.\} and Jung, \{S. J.\} and J. Jung and H. Lee and G. Jo and Kim, \{Y. K.\} and Kim, \{H. G.\} and Choi, \{K. M.\}",

year = "2008",

doi = "10.1049/el:20081339",

language = "English",

volume = "44",

pages = "1140--1141",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "19",

}

TY - JOUR

T1 - RF model of 3-RC network structure for metal-insulator-metal capacitor

AU - Kang, I. M.

AU - Choi, T. H.

AU - Joe, J. H.

AU - Jung, S. J.

AU - Jung, J.

AU - Lee, H.

AU - Jo, G.

AU - Kim, Y. K.

AU - Kim, H. G.

AU - Choi, K. M.

PY - 2008

Y1 - 2008

N2 - A radio-frequency (RF) equivalent circuit model for the metal-insulator-metal (MIM) capacitor with both side bottom plate contact is presented. The proposed model consists of 3-distributed RC networks and substrate networks. The accuracy of the MIM capacitor model is verified for Z-parameters, effective capacitance (Ceff), quality factor (Q), and MIM capacitor impedance (Zc) up to 20GHz. The effects of substrate network components on MIM's frequency characteristics are also analysed through Z-parameters. Finally, the cutoff frequency of the MIM is extracted from Q-factor and Zc.

AB - A radio-frequency (RF) equivalent circuit model for the metal-insulator-metal (MIM) capacitor with both side bottom plate contact is presented. The proposed model consists of 3-distributed RC networks and substrate networks. The accuracy of the MIM capacitor model is verified for Z-parameters, effective capacitance (Ceff), quality factor (Q), and MIM capacitor impedance (Zc) up to 20GHz. The effects of substrate network components on MIM's frequency characteristics are also analysed through Z-parameters. Finally, the cutoff frequency of the MIM is extracted from Q-factor and Zc.

UR - https://www.scopus.com/pages/publications/51549097747

U2 - 10.1049/el:20081339

DO - 10.1049/el:20081339

M3 - Article

AN - SCOPUS:51549097747

SN - 0013-5194

VL - 44

SP - 1140

EP - 1141

JO - Electronics Letters

JF - Electronics Letters

IS - 19

ER -

RF model of 3-RC network structure for metal-insulator-metal capacitor

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