RF model of BEOL vertical natural capacitor (VNCAP) fabricated by 45-nm RF CMOS technology and its verification

In Man Kang, Seung Jae Jung, Tae Hoon Choi, Jae Hong Jung, Chulho Chung, Han Su Kim, Kangwook Park, Hansu Oh, Hyun Woo Lee, Gwangdoo Jo, Young Kwang Kim, Han Gu Kim, Kyu Myung Choi

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

A radio-frequency equivalent circuit model for the symmetric vertical natural capacitor (VNCAP) in a 45-nm low-standby-power CMOS process is presented. The average effective capacitance density of 2.24 fF/ μm2 is obtained from VNCAPs of 1 ×, M1-M5) + 2 ×, M6-M7) metal-layer configuration after the open-short de-embedding procedure. The proposed model consists of main series capacitance network and lossy substrate network. The accuracy of the VNCAP model is verified for S-parameters, effective capacitance (Ceff), and quality factor (Q) up to 15 GHz. The proposed model can accurately describe the frequency characteristics of S-parameters, Ceff, and Q-factor up to 15 GHz for VNCAPs with different widths and lengths.

Original languageEnglish
Pages (from-to)538-540
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number5
DOIs
StatePublished - 2009

Keywords

  • On-wafer radio-frequency (RF) measurement
  • Quality factor
  • RF passive device model
  • Vertical natural capacitor (VNCAP)

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