@inproceedings{c122e35481fa41d38cbc25b48df275d5,
title = "RF performance of InGaAs-based T-gate junctionless field-effect transistors which applicable for high frequency network systems",
abstract = "The T-gate InGaAs-based JLFET's which has high frequency RF characteristics have been demonstrated by TCAD tool. To achieve advanced performance of RF characteristics, the T-gate structure is applied, also. By T-gate structure we decrease gate resistance (RG) and achieve a higher maximum oscillation frequency (fmax) compare with planar-type structure. However, the increase of parasitic gate capacitance degrades current gain cut-off frequency (fT) and this trade-off between parasitic components and optimal device structure will be discussed.",
keywords = "High-frequency network, InGaAs, JL-FinFET, RF characteristics",
author = "Seo, {Jae Hwa} and Yoon, {Young Jun} and Kim, {Sung Yoon} and Kim, {Young Jae} and Kang, {In Man}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 2015 International Conference on Information Networking, ICOIN 2015 ; Conference date: 12-01-2015 Through 14-01-2015",
year = "2015",
month = mar,
day = "10",
doi = "10.1109/ICOIN.2015.7057959",
language = "English",
series = "International Conference on Information Networking",
publisher = "IEEE Computer Society",
pages = "519--520",
booktitle = "2015 International Conference on Information Networking, ICOIN 2015",
address = "United States",
}