Room temperature ferromagnetism from magnetic ion free binary oxide film

Jiwoong Kim; Sehwan Song; Yesul Choi; Dooyong Lee; Hyegyeong Kim; Ho Sun Lee; Jong Seong Bae; Sungkyun Park

doi:10.1016/j.jmmm.2019.165970

Room temperature ferromagnetism from magnetic ion free binary oxide film

Jiwoong Kim, Sehwan Song, Yesul Choi, Dooyong Lee, Hyegyeong Kim, Ho Sun Lee, Jong Seong Bae, Sungkyun Park

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We herein investigated the magnetic moment of thickness-dependent SnO₂ films at room temperature. The saturation magnetization of SnO₂ films grown on the r-plane sapphire substrate was decreased with increasing the film thickness. An areal saturation magnetization, a magnetic moment in the unit surface area, did not vary with increasing film thickness. Hall effect measurement indicated that the charge carrier from oxygen vacancy was presented in the epitaxial SnO₂ films. Furthermore, X-ray photoelectron spectroscopy analysis revealed that the oxygen vacancy profiles were consistent with that of magnetization. These results suggest that oxygen vacancies at the surface region are the source of the magnetic moment in SnO₂ films.

Original language	English
Article number	165970
Journal	Journal of Magnetism and Magnetic Materials
Volume	497
DOIs	https://doi.org/10.1016/j.jmmm.2019.165970
State	Published - 1 Mar 2020

Keywords

Oxygen vacancies
Room temperature ferromagnetism
SnO

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10.1016/j.jmmm.2019.165970

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title = "Room temperature ferromagnetism from magnetic ion free binary oxide film",

abstract = "We herein investigated the magnetic moment of thickness-dependent SnO2 films at room temperature. The saturation magnetization of SnO2 films grown on the r-plane sapphire substrate was decreased with increasing the film thickness. An areal saturation magnetization, a magnetic moment in the unit surface area, did not vary with increasing film thickness. Hall effect measurement indicated that the charge carrier from oxygen vacancy was presented in the epitaxial SnO2 films. Furthermore, X-ray photoelectron spectroscopy analysis revealed that the oxygen vacancy profiles were consistent with that of magnetization. These results suggest that oxygen vacancies at the surface region are the source of the magnetic moment in SnO2 films.",

keywords = "Oxygen vacancies, Room temperature ferromagnetism, SnO",

author = "Jiwoong Kim and Sehwan Song and Yesul Choi and Dooyong Lee and Hyegyeong Kim and Lee, {Ho Sun} and Bae, {Jong Seong} and Sungkyun Park",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2020",

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doi = "10.1016/j.jmmm.2019.165970",

language = "English",

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TY - JOUR

T1 - Room temperature ferromagnetism from magnetic ion free binary oxide film

AU - Kim, Jiwoong

AU - Song, Sehwan

AU - Choi, Yesul

AU - Lee, Dooyong

AU - Kim, Hyegyeong

AU - Lee, Ho Sun

AU - Bae, Jong Seong

AU - Park, Sungkyun

PY - 2020/3/1

Y1 - 2020/3/1

N2 - We herein investigated the magnetic moment of thickness-dependent SnO2 films at room temperature. The saturation magnetization of SnO2 films grown on the r-plane sapphire substrate was decreased with increasing the film thickness. An areal saturation magnetization, a magnetic moment in the unit surface area, did not vary with increasing film thickness. Hall effect measurement indicated that the charge carrier from oxygen vacancy was presented in the epitaxial SnO2 films. Furthermore, X-ray photoelectron spectroscopy analysis revealed that the oxygen vacancy profiles were consistent with that of magnetization. These results suggest that oxygen vacancies at the surface region are the source of the magnetic moment in SnO2 films.

AB - We herein investigated the magnetic moment of thickness-dependent SnO2 films at room temperature. The saturation magnetization of SnO2 films grown on the r-plane sapphire substrate was decreased with increasing the film thickness. An areal saturation magnetization, a magnetic moment in the unit surface area, did not vary with increasing film thickness. Hall effect measurement indicated that the charge carrier from oxygen vacancy was presented in the epitaxial SnO2 films. Furthermore, X-ray photoelectron spectroscopy analysis revealed that the oxygen vacancy profiles were consistent with that of magnetization. These results suggest that oxygen vacancies at the surface region are the source of the magnetic moment in SnO2 films.

KW - Oxygen vacancies

KW - Room temperature ferromagnetism

KW - SnO

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DO - 10.1016/j.jmmm.2019.165970

M3 - Article

AN - SCOPUS:85073121989

SN - 0304-8853

VL - 497

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

M1 - 165970

ER -

Room temperature ferromagnetism from magnetic ion free binary oxide film

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