Roughness reduction of PVDF-TrFE insulator By reverse transfer printing for enhanced performance of ferroelectric organic memory transistors

We suggest a viable method to reduce the ferroelectric polymer surface for improved electrical performance in ferroelectric organic memory transistors. By using a reverse transfer printing (RTP) method, the surface roughness of the poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)] film is considerably reduced to as low as 1.3 nm, which is much lower than that of the native P(VDFTrFE) film (15 nm). The mobility (2.2×10^-2 cm² V-1s^-1) and memory on-off ratio (3.8×102) of thin-film transistors with the RTP-processed P(VDF-TrFE) insulator were enhanced, compared with the mobility (7.3×10-3 cm² V-1s^-1) and memory on-off ratio (3.5×101) of nonreversed memory transistors.