RuO2/GaN Schottky contact formation with superior forward and reverse characteristics

Suk Hun Lee; Jae Kyu Chun; Jae Jin Hur; Jae Seung Lee; Gi Hong Rue; Young Ho Bae; Sung Ho Hahm; Yong Hyun Lee; Jung Hee Lee

doi:10.1109/55.843144

RuO₂/GaN Schottky contact formation with superior forward and reverse characteristics

Suk Hun Lee, Jae Kyu Chun, Jae Jin Hur, Jae Seung Lee, Gi Hong Rue, Young Ho Bae, Sung Ho Hahm, Yong Hyun Lee, Jung Hee Lee

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

This is a first time report of a ruthenium oxide (RuO₂) Schottky contact on GaN. RuO₂ and Pt Schottky diodes were fabricated and their characteristics compared. When the RuO₂ Schottky contact was annealed at 500 °C for 30 min, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the RuO₂ were dramatically improved. The annealed RuO₂/GaN Schottky contact exhibited a reverse leakage current that was at least two or three orders lower in magnitude than that of the Pt/GaN contact along with a very large barrier height of 1.46 eV, which is the highest value ever reported for a GaN Schottky system.

Original language	English
Pages (from-to)	261-263
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	21
Issue number	6
DOIs	https://doi.org/10.1109/55.843144
State	Published - Jun 2000

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title = "RuO2/GaN Schottky contact formation with superior forward and reverse characteristics",

abstract = "This is a first time report of a ruthenium oxide (RuO2) Schottky contact on GaN. RuO2 and Pt Schottky diodes were fabricated and their characteristics compared. When the RuO2 Schottky contact was annealed at 500 °C for 30 min, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the RuO2 were dramatically improved. The annealed RuO2/GaN Schottky contact exhibited a reverse leakage current that was at least two or three orders lower in magnitude than that of the Pt/GaN contact along with a very large barrier height of 1.46 eV, which is the highest value ever reported for a GaN Schottky system.",

author = "Lee, {Suk Hun} and Chun, {Jae Kyu} and Hur, {Jae Jin} and Lee, {Jae Seung} and Rue, {Gi Hong} and Bae, {Young Ho} and Hahm, {Sung Ho} and Lee, {Yong Hyun} and Lee, {Jung Hee}",

year = "2000",

month = jun,

doi = "10.1109/55.843144",

language = "English",

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pages = "261--263",

journal = "IEEE Electron Device Letters",

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TY - JOUR

T1 - RuO2/GaN Schottky contact formation with superior forward and reverse characteristics

AU - Lee, Suk Hun

AU - Chun, Jae Kyu

AU - Hur, Jae Jin

AU - Lee, Jae Seung

AU - Rue, Gi Hong

AU - Bae, Young Ho

AU - Hahm, Sung Ho

AU - Lee, Yong Hyun

AU - Lee, Jung Hee

PY - 2000/6

Y1 - 2000/6

N2 - This is a first time report of a ruthenium oxide (RuO2) Schottky contact on GaN. RuO2 and Pt Schottky diodes were fabricated and their characteristics compared. When the RuO2 Schottky contact was annealed at 500 °C for 30 min, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the RuO2 were dramatically improved. The annealed RuO2/GaN Schottky contact exhibited a reverse leakage current that was at least two or three orders lower in magnitude than that of the Pt/GaN contact along with a very large barrier height of 1.46 eV, which is the highest value ever reported for a GaN Schottky system.

AB - This is a first time report of a ruthenium oxide (RuO2) Schottky contact on GaN. RuO2 and Pt Schottky diodes were fabricated and their characteristics compared. When the RuO2 Schottky contact was annealed at 500 °C for 30 min, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the RuO2 were dramatically improved. The annealed RuO2/GaN Schottky contact exhibited a reverse leakage current that was at least two or three orders lower in magnitude than that of the Pt/GaN contact along with a very large barrier height of 1.46 eV, which is the highest value ever reported for a GaN Schottky system.

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DO - 10.1109/55.843144

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SN - 0741-3106

VL - 21

SP - 261

EP - 263

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

ER -

RuO₂/GaN Schottky contact formation with superior forward and reverse characteristics

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