Scalable model of substrate resistance components in RF MOSFETs with bar-type body contact considered layout dimensions

In Man Kang; Seung Jae Jung; Tae Hoon Choi; Hyun Woo Lee; Gwangdoo Jo; Young Kwang Kim; Han Gu Kim; Kyu Myung Choi

doi:10.1109/LED.2009.2014085

Scalable model of substrate resistance components in RF MOSFETs with bar-type body contact considered layout dimensions

In Man Kang, Seung Jae Jung, Tae Hoon Choi, Hyun Woo Lee, Gwangdoo Jo, Young Kwang Kim, Han Gu Kim, Kyu Myung Choi

School of Electronics Engineering

Samsung

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Scalable model of substrate resistance components for radio-frequency MOSFETs fabricated by 65-nm CMOS technology with the bar-type body contact set in a horizontal direction to gate poly is presented. We consider various layout dimensions, such as channel length; unit finger width; number of fingers; distance between body contact and active region; and gate poly to gate poly distance on substrate resistance modeling. By using our model, the output admittance of the MOSFETs is well matched up to 50 GHz. The proposed models for substrate resistance are more accurate for devices with various geometries than previous substrate resistance models.

Original language	English
Pages (from-to)	404-406
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	4
DOIs	https://doi.org/10.1109/LED.2009.2014085
State	Published - 2009

Keywords

Parameter extraction
Radio-frequency (RF) MOSFETs
Scalable model
Substrate resistance network

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10.1109/LED.2009.2014085

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title = "Scalable model of substrate resistance components in RF MOSFETs with bar-type body contact considered layout dimensions",

abstract = "Scalable model of substrate resistance components for radio-frequency MOSFETs fabricated by 65-nm CMOS technology with the bar-type body contact set in a horizontal direction to gate poly is presented. We consider various layout dimensions, such as channel length; unit finger width; number of fingers; distance between body contact and active region; and gate poly to gate poly distance on substrate resistance modeling. By using our model, the output admittance of the MOSFETs is well matched up to 50 GHz. The proposed models for substrate resistance are more accurate for devices with various geometries than previous substrate resistance models.",

keywords = "Parameter extraction, Radio-frequency (RF) MOSFETs, Scalable model, Substrate resistance network",

author = "Kang, {In Man} and Jung, {Seung Jae} and Choi, {Tae Hoon} and Lee, {Hyun Woo} and Gwangdoo Jo and Kim, {Young Kwang} and Kim, {Han Gu} and Choi, {Kyu Myung}",

year = "2009",

doi = "10.1109/LED.2009.2014085",

language = "English",

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journal = "IEEE Electron Device Letters",

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T1 - Scalable model of substrate resistance components in RF MOSFETs with bar-type body contact considered layout dimensions

AU - Kang, In Man

AU - Jung, Seung Jae

AU - Choi, Tae Hoon

AU - Lee, Hyun Woo

AU - Jo, Gwangdoo

AU - Kim, Young Kwang

AU - Kim, Han Gu

AU - Choi, Kyu Myung

PY - 2009

Y1 - 2009

N2 - Scalable model of substrate resistance components for radio-frequency MOSFETs fabricated by 65-nm CMOS technology with the bar-type body contact set in a horizontal direction to gate poly is presented. We consider various layout dimensions, such as channel length; unit finger width; number of fingers; distance between body contact and active region; and gate poly to gate poly distance on substrate resistance modeling. By using our model, the output admittance of the MOSFETs is well matched up to 50 GHz. The proposed models for substrate resistance are more accurate for devices with various geometries than previous substrate resistance models.

AB - Scalable model of substrate resistance components for radio-frequency MOSFETs fabricated by 65-nm CMOS technology with the bar-type body contact set in a horizontal direction to gate poly is presented. We consider various layout dimensions, such as channel length; unit finger width; number of fingers; distance between body contact and active region; and gate poly to gate poly distance on substrate resistance modeling. By using our model, the output admittance of the MOSFETs is well matched up to 50 GHz. The proposed models for substrate resistance are more accurate for devices with various geometries than previous substrate resistance models.

KW - Parameter extraction

KW - Radio-frequency (RF) MOSFETs

KW - Scalable model

KW - Substrate resistance network

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DO - 10.1109/LED.2009.2014085

M3 - Article

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SN - 0741-3106

VL - 30

SP - 404

EP - 406

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -

Scalable model of substrate resistance components in RF MOSFETs with bar-type body contact considered layout dimensions

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Keywords

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