Scaling behavior of in0.7Ga0.3as HEMTs for logic

Dae Hyun Kim; Jesús A. Del Alamo

doi:10.1109/IEDM.2006.346728

Scaling behavior of in_0.7Ga_0.3as HEMTs for logic

Dae Hyun Kim, Jesús A. Del Alamo

Massachusetts Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

29 Scopus citations

Abstract

We have experimentally investigated the impact of lateral and vertical scaling of In_0.7Ga_0.3As HEMTs on their logic performance. Reducing the In_0.52Al_0.48As insulator thickness results in much better electrostatic integrity and improved short-channel effects down to a gate length of 60 nm. Our nearly enhancement-mode 60 nm HEMTs feature V _T = -0.02 V, DIBL = 93 mV/V and S = 88 mV/V. For a given value of I_ON/I_OFF = 10³ we obtain CV/I = 0.85 ps at V_cc = 0.5 V. For the same leakage current, these devices exhibit 2.5 times more current drive than state-of-the-art low-power 65 nm CMOS.

Original language	English
Title of host publication	2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs	https://doi.org/10.1109/IEDM.2006.346728
State	Published - 2006
Event	2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States Duration: 10 Dec 2006 → 13 Dec 2006

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2006 International Electron Devices Meeting, IEDM
Country/Territory	United States
City	San Francisco, CA
Period	10/12/06 → 13/12/06

Access to Document

10.1109/IEDM.2006.346728

Cite this

@inproceedings{9c0c22cd69304def9192b577b15fde17,

title = "Scaling behavior of in0.7Ga0.3as HEMTs for logic",

abstract = "We have experimentally investigated the impact of lateral and vertical scaling of In0.7Ga0.3As HEMTs on their logic performance. Reducing the In0.52Al0.48As insulator thickness results in much better electrostatic integrity and improved short-channel effects down to a gate length of 60 nm. Our nearly enhancement-mode 60 nm HEMTs feature V T = -0.02 V, DIBL = 93 mV/V and S = 88 mV/V. For a given value of ION/IOFF = 103 we obtain CV/I = 0.85 ps at Vcc = 0.5 V. For the same leakage current, these devices exhibit 2.5 times more current drive than state-of-the-art low-power 65 nm CMOS.",

author = "Kim, {Dae Hyun} and {Del Alamo}, {Jes{\'u}s A.}",

year = "2006",

doi = "10.1109/IEDM.2006.346728",

language = "English",

isbn = "1424404398",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2006 International Electron Devices Meeting Technical Digest, IEDM",

note = "2006 International Electron Devices Meeting, IEDM ; Conference date: 10-12-2006 Through 13-12-2006",

}

TY - GEN

T1 - Scaling behavior of in0.7Ga0.3as HEMTs for logic

AU - Kim, Dae Hyun

AU - Del Alamo, Jesús A.

PY - 2006

Y1 - 2006

N2 - We have experimentally investigated the impact of lateral and vertical scaling of In0.7Ga0.3As HEMTs on their logic performance. Reducing the In0.52Al0.48As insulator thickness results in much better electrostatic integrity and improved short-channel effects down to a gate length of 60 nm. Our nearly enhancement-mode 60 nm HEMTs feature V T = -0.02 V, DIBL = 93 mV/V and S = 88 mV/V. For a given value of ION/IOFF = 103 we obtain CV/I = 0.85 ps at Vcc = 0.5 V. For the same leakage current, these devices exhibit 2.5 times more current drive than state-of-the-art low-power 65 nm CMOS.

AB - We have experimentally investigated the impact of lateral and vertical scaling of In0.7Ga0.3As HEMTs on their logic performance. Reducing the In0.52Al0.48As insulator thickness results in much better electrostatic integrity and improved short-channel effects down to a gate length of 60 nm. Our nearly enhancement-mode 60 nm HEMTs feature V T = -0.02 V, DIBL = 93 mV/V and S = 88 mV/V. For a given value of ION/IOFF = 103 we obtain CV/I = 0.85 ps at Vcc = 0.5 V. For the same leakage current, these devices exhibit 2.5 times more current drive than state-of-the-art low-power 65 nm CMOS.

UR - http://www.scopus.com/inward/record.url?scp=46049103610&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2006.346728

DO - 10.1109/IEDM.2006.346728

M3 - Conference contribution

AN - SCOPUS:46049103610

SN - 1424404398

SN - 9781424404391

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2006 International Electron Devices Meeting Technical Digest, IEDM

T2 - 2006 International Electron Devices Meeting, IEDM

Y2 - 10 December 2006 through 13 December 2006

ER -