Scanning resistive probe microscopy: Imaging ferroelectric domains

Hongsik Park; Juhwan Jung; Dong Ki Min; Sungdong Kim; Seunghum Hong; Hyunjung Shin

doi:10.1063/1.1667266

Scanning resistive probe microscopy: Imaging ferroelectric domains

Hongsik Park, Juhwan Jung, Dong Ki Min, Sungdong Kim, Seunghum Hong, Hyunjung Shin

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

A resistive probe that detects electric field by field-induced resistance changes in a small resistive region at the apex of the tip was reported. A method of imaging ferroelectric domains at high speed, which was named scanning resistive probe microscopy (SRPM) was demonstrated. The probe was designed and fabricated by self-aligning process that readily implemented the resistive region at the tip apex. The probe was contacted with a thermally oxidized silicon sample in order to measure the field sensitivity.

Original language	English
Pages (from-to)	1734-1736
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	10
DOIs	https://doi.org/10.1063/1.1667266
State	Published - 8 Mar 2004

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abstract = "A resistive probe that detects electric field by field-induced resistance changes in a small resistive region at the apex of the tip was reported. A method of imaging ferroelectric domains at high speed, which was named scanning resistive probe microscopy (SRPM) was demonstrated. The probe was designed and fabricated by self-aligning process that readily implemented the resistive region at the tip apex. The probe was contacted with a thermally oxidized silicon sample in order to measure the field sensitivity.",

author = "Hongsik Park and Juhwan Jung and Min, {Dong Ki} and Sungdong Kim and Seunghum Hong and Hyunjung Shin",

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AU - Jung, Juhwan

AU - Min, Dong Ki

AU - Kim, Sungdong

AU - Hong, Seunghum

AU - Shin, Hyunjung

PY - 2004/3/8

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Scanning resistive probe microscopy: Imaging ferroelectric domains

Abstract

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