TY - JOUR
T1 - Schottky barrier effect on the electrical properties of Fe 3O4/ZnO and Fe3O4/Nb
T2 - SrTiO 3 heterostructures
AU - Yang, Kiwon
AU - Kim, D. H.
AU - Dho, Joonghoe
PY - 2011/9/7
Y1 - 2011/9/7
N2 - The current-voltage (I-V) characteristics of Fe3O 4/Nb-doped SrTiO3(Nb : STO) and Fe3O 4/ZnO junctions prepared by pulsed laser deposition were investigated as a function of temperature. The rectifying behaviour was more distinctive in Fe3O4/Nb : STO than in the Fe3O 4/ZnO. Contrary to Fe3O4/Nb : STO, remarkably, the current flow in Fe3O4/ZnO was slightly larger for negative bias voltages than for positive bias voltages. The threshold voltage in Fe3O4/Nb : STO dramatically shifted to a higher voltage by decreasing the temperature, and hysteresis behaviour with a cyclic voltage sweep appeared below 120 K. Upon cooling, the rectifying behaviour in Fe 3O4/ZnO gradually disappeared within the measurement range. The observed difference between Fe3O4/Nb : STO and Fe3O4/ZnO could be explained by the shape and height of the Schottky barrier which was determined by the relative magnitude of the work functions of the two contact materials. The formation of the Schottky barrier presumably resulted from an upward shift of the interface band in Fe 3O4/Nb : STO, while a little downward shift of the interface band occurred in Fe3O4/ZnO. In addition, Al-doping into ZnO induced a complete disappearance of the Schottky barrier in the Fe3O4/Al-doped ZnO junction.
AB - The current-voltage (I-V) characteristics of Fe3O 4/Nb-doped SrTiO3(Nb : STO) and Fe3O 4/ZnO junctions prepared by pulsed laser deposition were investigated as a function of temperature. The rectifying behaviour was more distinctive in Fe3O4/Nb : STO than in the Fe3O 4/ZnO. Contrary to Fe3O4/Nb : STO, remarkably, the current flow in Fe3O4/ZnO was slightly larger for negative bias voltages than for positive bias voltages. The threshold voltage in Fe3O4/Nb : STO dramatically shifted to a higher voltage by decreasing the temperature, and hysteresis behaviour with a cyclic voltage sweep appeared below 120 K. Upon cooling, the rectifying behaviour in Fe 3O4/ZnO gradually disappeared within the measurement range. The observed difference between Fe3O4/Nb : STO and Fe3O4/ZnO could be explained by the shape and height of the Schottky barrier which was determined by the relative magnitude of the work functions of the two contact materials. The formation of the Schottky barrier presumably resulted from an upward shift of the interface band in Fe 3O4/Nb : STO, while a little downward shift of the interface band occurred in Fe3O4/ZnO. In addition, Al-doping into ZnO induced a complete disappearance of the Schottky barrier in the Fe3O4/Al-doped ZnO junction.
UR - http://www.scopus.com/inward/record.url?scp=80051926126&partnerID=8YFLogxK
U2 - 10.1088/0022-3727/44/35/355301
DO - 10.1088/0022-3727/44/35/355301
M3 - Article
AN - SCOPUS:80051926126
SN - 0022-3727
VL - 44
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
IS - 35
M1 - 355301
ER -