Schottky barrier height enhancement for In0.52AlAs layer by using in-situ Ar plasma pre-treatment and its application to In0.52AlAs/In0.53 GaAs/InP HEMT's

Dae Hyun Kim; Young Ho Kim; Jae Eung Oh; Kwang Seok Seo

Schottky barrier height enhancement for In_0.52AlAs layer by using in-situ Ar plasma pre-treatment and its application to In_0.52AlAs/In_0.53 GaAs/InP HEMT's

Dae Hyun Kim, Young Ho Kim, Jae Eung Oh, Kwang Seok Seo

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

To increase a schottky barrier height (SBH) for In_0.52AlAs layer, in-situ Ar plasma pre-treatment method was proposed. Through the pre-treatment of Ar plasma before schottky metallization, a SBH of + 1.05 eV for In_0.52AlAs layer was obtained by C-V measurement for a vertical type schottky diode. It was thought to be an effective removal of native oxide on InAlAs layer. More pre-treatment would result in a decrease of SBH due to a plasma induced damage effect. This process was applied to fabricate In_0.52AlAs/In_0.53GaAs/InP HEMT, which led to an improvement in sub-threshold leakage, sub-threshold swing and reverse breakdown voltage characteristics.

Original language	English
Pages (from-to)	102-105
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
State	Published - 2003
Event	2003 International Conference Indium Phosphide and Related Materials - Santa Barbara, CA, United States Duration: 12 May 2003 → 16 May 2003

Cite this

@article{9566b2c12d6e494d967cf1c9979702bd,

title = "Schottky barrier height enhancement for In0.52AlAs layer by using in-situ Ar plasma pre-treatment and its application to In0.52AlAs/In0.53 GaAs/InP HEMT's",

abstract = "To increase a schottky barrier height (SBH) for In0.52AlAs layer, in-situ Ar plasma pre-treatment method was proposed. Through the pre-treatment of Ar plasma before schottky metallization, a SBH of + 1.05 eV for In0.52AlAs layer was obtained by C-V measurement for a vertical type schottky diode. It was thought to be an effective removal of native oxide on InAlAs layer. More pre-treatment would result in a decrease of SBH due to a plasma induced damage effect. This process was applied to fabricate In0.52AlAs/In0.53GaAs/InP HEMT, which led to an improvement in sub-threshold leakage, sub-threshold swing and reverse breakdown voltage characteristics.",

author = "Kim, {Dae Hyun} and Kim, {Young Ho} and Oh, {Jae Eung} and Seo, {Kwang Seok}",

year = "2003",

language = "English",

pages = "102--105",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2003 International Conference Indium Phosphide and Related Materials ; Conference date: 12-05-2003 Through 16-05-2003",

}

Schottky barrier height enhancement for In_0.52AlAs layer by using in-situ Ar plasma pre-treatment and its application to In_0.52AlAs/In_0.53 GaAs/InP HEMT's. / Kim, Dae Hyun; Kim, Young Ho; Oh, Jae Eung et al.
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2003, p. 102-105.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Schottky barrier height enhancement for In0.52AlAs layer by using in-situ Ar plasma pre-treatment and its application to In0.52AlAs/In0.53 GaAs/InP HEMT's

AU - Kim, Dae Hyun

AU - Kim, Young Ho

AU - Oh, Jae Eung

AU - Seo, Kwang Seok

PY - 2003

Y1 - 2003

N2 - To increase a schottky barrier height (SBH) for In0.52AlAs layer, in-situ Ar plasma pre-treatment method was proposed. Through the pre-treatment of Ar plasma before schottky metallization, a SBH of + 1.05 eV for In0.52AlAs layer was obtained by C-V measurement for a vertical type schottky diode. It was thought to be an effective removal of native oxide on InAlAs layer. More pre-treatment would result in a decrease of SBH due to a plasma induced damage effect. This process was applied to fabricate In0.52AlAs/In0.53GaAs/InP HEMT, which led to an improvement in sub-threshold leakage, sub-threshold swing and reverse breakdown voltage characteristics.

AB - To increase a schottky barrier height (SBH) for In0.52AlAs layer, in-situ Ar plasma pre-treatment method was proposed. Through the pre-treatment of Ar plasma before schottky metallization, a SBH of + 1.05 eV for In0.52AlAs layer was obtained by C-V measurement for a vertical type schottky diode. It was thought to be an effective removal of native oxide on InAlAs layer. More pre-treatment would result in a decrease of SBH due to a plasma induced damage effect. This process was applied to fabricate In0.52AlAs/In0.53GaAs/InP HEMT, which led to an improvement in sub-threshold leakage, sub-threshold swing and reverse breakdown voltage characteristics.

UR - http://www.scopus.com/inward/record.url?scp=0038148617&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0038148617

SN - 1092-8669

SP - 102

EP - 105

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - 2003 International Conference Indium Phosphide and Related Materials

Y2 - 12 May 2003 through 16 May 2003

ER -

Schottky barrier height enhancement for In_0.52AlAs layer by using in-situ Ar plasma pre-treatment and its application to In_0.52AlAs/In_0.53 GaAs/InP HEMT's

Abstract

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