Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon

Sung Jong Park; Heon Bok Lee; Wang Lian Shan; Soo Jin Chua; Jung Hee Lee; Sung Ho Hahm

doi:10.1002/pssc.200461393

Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon

Sung Jong Park, Heon Bok Lee, Wang Lian Shan, Soo Jin Chua, Jung Hee Lee, Sung Ho Hahm

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The planar Schottky diodes were fabricated, characterized and modelled to study the electrical characteristics of cracked GaN epitaxial layer on (111) silicon substrate. We deposited Ti/Al/Ni/Au as the ohmic metal and Pt as the Schottky metal. The ohmic contact resistivity was 5.51×10^-5 Ω·cm² after annealing in N₂ ambient at 700°C for 30 s. The fabricated Schottky diode exhibited the barrier height of 0.7 eV and the ideal factor was 2.4. We got the cutoff wavelength at 360 nm, peak responsivity of 0.097 A/W at 300nm, and UV/visible rejection ratio was about 10⁴. The SPICE simulation with the circuit model, which was composed with one Pt/GaN diode and three parasitic diodes, showed good agreement with the experiment.

Original language	English
Pages (from-to)	2559-2563
Number of pages	5
Journal	Physica Status Solidi C: Conferences
Volume	2
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200461393
State	Published - 2005

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abstract = "The planar Schottky diodes were fabricated, characterized and modelled to study the electrical characteristics of cracked GaN epitaxial layer on (111) silicon substrate. We deposited Ti/Al/Ni/Au as the ohmic metal and Pt as the Schottky metal. The ohmic contact resistivity was 5.51×10-5 Ω·cm2 after annealing in N2 ambient at 700°C for 30 s. The fabricated Schottky diode exhibited the barrier height of 0.7 eV and the ideal factor was 2.4. We got the cutoff wavelength at 360 nm, peak responsivity of 0.097 A/W at 300nm, and UV/visible rejection ratio was about 104. The SPICE simulation with the circuit model, which was composed with one Pt/GaN diode and three parasitic diodes, showed good agreement with the experiment.",

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AU - Park, Sung Jong

AU - Lee, Heon Bok

AU - Shan, Wang Lian

AU - Chua, Soo Jin

AU - Lee, Jung Hee

AU - Hahm, Sung Ho

PY - 2005

Y1 - 2005

N2 - The planar Schottky diodes were fabricated, characterized and modelled to study the electrical characteristics of cracked GaN epitaxial layer on (111) silicon substrate. We deposited Ti/Al/Ni/Au as the ohmic metal and Pt as the Schottky metal. The ohmic contact resistivity was 5.51×10-5 Ω·cm2 after annealing in N2 ambient at 700°C for 30 s. The fabricated Schottky diode exhibited the barrier height of 0.7 eV and the ideal factor was 2.4. We got the cutoff wavelength at 360 nm, peak responsivity of 0.097 A/W at 300nm, and UV/visible rejection ratio was about 104. The SPICE simulation with the circuit model, which was composed with one Pt/GaN diode and three parasitic diodes, showed good agreement with the experiment.

AB - The planar Schottky diodes were fabricated, characterized and modelled to study the electrical characteristics of cracked GaN epitaxial layer on (111) silicon substrate. We deposited Ti/Al/Ni/Au as the ohmic metal and Pt as the Schottky metal. The ohmic contact resistivity was 5.51×10-5 Ω·cm2 after annealing in N2 ambient at 700°C for 30 s. The fabricated Schottky diode exhibited the barrier height of 0.7 eV and the ideal factor was 2.4. We got the cutoff wavelength at 360 nm, peak responsivity of 0.097 A/W at 300nm, and UV/visible rejection ratio was about 104. The SPICE simulation with the circuit model, which was composed with one Pt/GaN diode and three parasitic diodes, showed good agreement with the experiment.

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Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon

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