Abstract
The crystals of 0.02%, 0.05%, 0.1%, and 0.5% Sn doped LiI are grown by the vertical Bridgman technique. The luminescence and scintillation properties of the grown crystals are investigated. X-ray excited emission spectrum of LiI (Sn) showed a broad emission band between 400-650 nm wavelength range at room temperature. Such emission is attributed to Sn2+ ion. Scintillation properties such as energy resolution, decay time profiles, and light yield are measured under 662 keV (137Cs) γ-ray excitation at room temperature. A maximum light yield of 6000 ± 600 ph/MeV is measured at room temperature. LiI (Sn) single crystals showed two exponential decay components under γ-ray excitation. The dependence of scintillation properties on the temperature is also presented. Changes in the decay time and light yield are measured from 295 K down to 10 K. The light yield of LiI (Sn) at 50 K is found to be nine times higher than that at room temperature.
Original language | English |
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Article number | 7454857 |
Pages (from-to) | 448-452 |
Number of pages | 5 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 63 |
Issue number | 2 |
DOIs | |
State | Published - Apr 2016 |
Keywords
- Decay time
- energy resolution
- light yield
- LiI (Sn)
- scintillation properties
- X-ray excitation