Scintillation properties of Bi₄(Ge_1-xSi _x)₃O₁₂ single crystals grown by Czochralski method

Using the Czochralski method, Bi₄(Ge₁- _xSi_x)₃O₁₂ (BGSO) (where x=0.1, 0.2, 0.3, 0.5, 0.7, 0.8 and 0.9) single crystals with different ratios of Bi ₄Ge₃O₁₂ and Bi₄Si₃O ₁₂ are grown. Comparing with published results, this report covers wide range of BGSO with different mole ratios of BSO and BGO crystals. Scintillation properties of the BGSO with x=0.1 and 0.9 mol ratios are presented. Problems during growth process such as non-transparency and cracks of this material are also presented. X-rays excitation of the grown samples showed emission spectra between 350 nm and 700 nm wavelength region. Under γ-rays excitation from a ₁₃₇Cs source, energy resolutions of 19% and 29% (FWHM) are obtained for x=0.1 and 0.9, respectively. BGSO showed three decay time components under γ -ray excitation at room temperature. At x=0.1 highest light yield of 36% of BGO is found.