Se-precursor effect on ZnSe films grown by OMVPE

The growth of ZnSe by organometallic vapor phase epitaxy (OMVPE) was investigated for diallyl selenide (DASe) and methylallyl selenide (MASe), combined with dimethylzinc: triethylamine (DMZn: NEt₃). The allyl selenide compounds are shown to reduce the growth temperature relative to that needed with diethyl selenide (DESe). The surface morphology of the grown ZnSe films varies on growth temperature and VI/II ratios. Secondary ion mass spectrometry (SIMS) measurements show increasing carbon incorporation with the VI/II ratio, and for a value of VI/II =~4 in MASe and VI/II=~1 in DASe. The amount of incorporated carbon abruptly jumps to concentrations of 10²¹ cm³, whereupon the films become polycrystalline. The results are interpreted in terms of dominant intramolecular decomposition pathways compared to homolysis pathway.