@inproceedings{8bcd0cbcf29a4a9ba7179401f065e64d,
title = "Selective annealing effects of asymmetric Schottky-type AiGaN metal-semiconductor-metal UV-B sensor",
abstract = "We proposed and fabricated AlGaN/GaN-based asymmetric Schottky-type metal-semiconductor-metal (MSM) ultraviolet (UV) photodiode with as-deposited Ti/Al/Ni/Au and Ni/Au as Schottky contact metal schemes. Ti/Al/Ni/Au electrode was annealed locally by using the electrical breakdown of a sacrificial insulator. We investigated the electrical and optical characteristics of devices before and after the local annealing. After the selective annealing, the dark current at -1.7 V bias and the UV to visible rejection ratio (UVRR) at -5 V bias were 2.4×10-12 A/cm2 and 527, which were improved remarkably compared to dark current of 4.05×10-10 A/cm2 and UVRR of 86 before annealing.",
author = "Seol, {J. H.} and Park, {B. J.} and Hahm, {S. H.}",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on State-of-the-Art Program on Compound Semiconductors 62, SOTAPOCS 2019 - 236th ECS Meeting ; Conference date: 13-10-2019 Through 17-10-2019",
year = "2019",
doi = "10.1149/09206.0019ecst",
language = "English",
isbn = "9781607688808",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "6",
pages = "19--23",
editor = "T. Anderson and J. Hite and R. Lynch and C. O'Dwyer and E. Douglas",
booktitle = "State-of-the-Art Program on Compound Semiconductors, SOTAPOCS 62",
address = "United States",
edition = "6",
}