Selector devices for 3-D cross-point ReRAM

Euijun Cha; Jiyong Woo; Daeseok Lee; Sangheon Lee; Hyunsang Hwang

doi:10.1109/ISCAS.2014.6865157

Selector devices for 3-D cross-point ReRAM

Euijun Cha
, Jiyong Woo
, Daeseok Lee
, Sangheon Lee
, Hyunsang Hwang

School of Electronics Engineering

Pohang University of Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

14 Scopus citations

Abstract

To integrate cross-point (4F²) ReRAM device array, we need to develop bi-directional selector device to suppress the sneak current path through the unselected devices. Although various candidates with selector properties have been recently reported, several problems such as insufficient current density at set/reset operations for nano-scale devices, low selectivity, and poor endurance have been remained. In this talk, we report two types of selector devices, threshold switching device based on insulator-metal transition (IMT) and multi-layered tunneling oxide device for cross-point ReRAM application. We propose the feasibility for 3-D vertical 1S-1R type ReRAM for future ultra-high density memory applications.

Original language	English
Title of host publication	2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	428-431
Number of pages	4
ISBN (Print)	9781479934324
DOIs	https://doi.org/10.1109/ISCAS.2014.6865157
State	Published - 2014
Event	2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 - Melbourne, VIC, Australia Duration: 1 Jun 2014 → 5 Jun 2014

Publication series

Name	Proceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)	0271-4310

Conference

Conference	2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
Country/Territory	Australia
City	Melbourne, VIC
Period	1/06/14 → 5/06/14

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10.1109/ISCAS.2014.6865157

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Cha, E., Woo, J., Lee, D., Lee, S., & Hwang, H. (2014). Selector devices for 3-D cross-point ReRAM. In 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 (pp. 428-431). Article 6865157 (Proceedings - IEEE International Symposium on Circuits and Systems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCAS.2014.6865157

@inproceedings{9e7c73c219ce410991cfee727318c149,

title = "Selector devices for 3-D cross-point ReRAM",

abstract = "To integrate cross-point (4F2) ReRAM device array, we need to develop bi-directional selector device to suppress the sneak current path through the unselected devices. Although various candidates with selector properties have been recently reported, several problems such as insufficient current density at set/reset operations for nano-scale devices, low selectivity, and poor endurance have been remained. In this talk, we report two types of selector devices, threshold switching device based on insulator-metal transition (IMT) and multi-layered tunneling oxide device for cross-point ReRAM application. We propose the feasibility for 3-D vertical 1S-1R type ReRAM for future ultra-high density memory applications.",

author = "Euijun Cha and Jiyong Woo and Daeseok Lee and Sangheon Lee and Hyunsang Hwang",

year = "2014",

doi = "10.1109/ISCAS.2014.6865157",

language = "English",

isbn = "9781479934324",

series = "Proceedings - IEEE International Symposium on Circuits and Systems",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "428--431",

booktitle = "2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014",

address = "United States",

note = "2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 ; Conference date: 01-06-2014 Through 05-06-2014",

}

Cha, E, Woo, J, Lee, D, Lee, S & Hwang, H 2014, Selector devices for 3-D cross-point ReRAM. in 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014., 6865157, Proceedings - IEEE International Symposium on Circuits and Systems, Institute of Electrical and Electronics Engineers Inc., pp. 428-431, 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014, Melbourne, VIC, Australia, 1/06/14. https://doi.org/10.1109/ISCAS.2014.6865157

Selector devices for 3-D cross-point ReRAM. / Cha, Euijun; Woo, Jiyong; Lee, Daeseok et al.
2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 428-431 6865157 (Proceedings - IEEE International Symposium on Circuits and Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Selector devices for 3-D cross-point ReRAM

AU - Cha, Euijun

AU - Woo, Jiyong

AU - Lee, Daeseok

AU - Lee, Sangheon

AU - Hwang, Hyunsang

PY - 2014

Y1 - 2014

N2 - To integrate cross-point (4F2) ReRAM device array, we need to develop bi-directional selector device to suppress the sneak current path through the unselected devices. Although various candidates with selector properties have been recently reported, several problems such as insufficient current density at set/reset operations for nano-scale devices, low selectivity, and poor endurance have been remained. In this talk, we report two types of selector devices, threshold switching device based on insulator-metal transition (IMT) and multi-layered tunneling oxide device for cross-point ReRAM application. We propose the feasibility for 3-D vertical 1S-1R type ReRAM for future ultra-high density memory applications.

AB - To integrate cross-point (4F2) ReRAM device array, we need to develop bi-directional selector device to suppress the sneak current path through the unselected devices. Although various candidates with selector properties have been recently reported, several problems such as insufficient current density at set/reset operations for nano-scale devices, low selectivity, and poor endurance have been remained. In this talk, we report two types of selector devices, threshold switching device based on insulator-metal transition (IMT) and multi-layered tunneling oxide device for cross-point ReRAM application. We propose the feasibility for 3-D vertical 1S-1R type ReRAM for future ultra-high density memory applications.

UR - https://www.scopus.com/pages/publications/84907414992

U2 - 10.1109/ISCAS.2014.6865157

DO - 10.1109/ISCAS.2014.6865157

M3 - Conference contribution

AN - SCOPUS:84907414992

SN - 9781479934324

T3 - Proceedings - IEEE International Symposium on Circuits and Systems

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BT - 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014

Y2 - 1 June 2014 through 5 June 2014

ER -

Selector devices for 3-D cross-point ReRAM

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