Selector-less ReRAM with an excellent non-linearity and reliability by the band-gap engineered multi-layer titanium oxide and triangular shaped AC pulse

Sangheon Lee; Daeseok Lee; Jiyong Woo; Euijun Cha; Jeonghwan Song; Jaesung Park; Hyunsang Hwang

doi:10.1109/IEDM.2013.6724603

Selector-less ReRAM with an excellent non-linearity and reliability by the band-gap engineered multi-layer titanium oxide and triangular shaped AC pulse

Sangheon Lee
, Daeseok Lee
, Jiyong Woo
, Euijun Cha
, Jeonghwan Song
, Jaesung Park
, Hyunsang Hwang

School of Electronics Engineering

Pohang University of Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

20 Scopus citations

Abstract

The effect of oxygen profile control of a multi-layer TiO_x on tunnel barrier characteristics has been investigated to achieve high non-linearity, endurance, and uniformity of a selector-less ReRAM. By optimizing oxygen profile of TiO_x layer in the selector-less ReRAM, non-linearity and a readout margin (low I_LRS at 1/2V_Read) have been significantly improved compared with 1S1R-type devices and non-linear ReRAMs (Figs. 1-2) [2]-[5]. In addition, AC behaviors of the selector-less ReRAM have been investigated with various AC pulse shape to realize the AC operation of the selector-less ReRAM in cross-point array. Hence, significantly improved AC switching reliability of the selector-less ReRAM was obtained by adopting triangular AC pulse shapes for both set and reset mode.

Original language	English
Title of host publication	2013 IEEE International Electron Devices Meeting, IEDM 2013
Pages	10.6.1-10.6.4
DOIs	https://doi.org/10.1109/IEDM.2013.6724603
State	Published - 2013
Event	2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States Duration: 9 Dec 2013 → 11 Dec 2013

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2013 IEEE International Electron Devices Meeting, IEDM 2013
Country/Territory	United States
City	Washington, DC
Period	9/12/13 → 11/12/13

Access to Document

10.1109/IEDM.2013.6724603

Cite this

Lee, S., Lee, D., Woo, J., Cha, E., Song, J., Park, J., & Hwang, H. (2013). Selector-less ReRAM with an excellent non-linearity and reliability by the band-gap engineered multi-layer titanium oxide and triangular shaped AC pulse. In 2013 IEEE International Electron Devices Meeting, IEDM 2013 (pp. 10.6.1-10.6.4). Article 6724603 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2013.6724603

@inproceedings{25a9258102cb4dd6b84d4bf60577d04a,

title = "Selector-less ReRAM with an excellent non-linearity and reliability by the band-gap engineered multi-layer titanium oxide and triangular shaped AC pulse",

abstract = "The effect of oxygen profile control of a multi-layer TiOx on tunnel barrier characteristics has been investigated to achieve high non-linearity, endurance, and uniformity of a selector-less ReRAM. By optimizing oxygen profile of TiOx layer in the selector-less ReRAM, non-linearity and a readout margin (low ILRS at 1/2VRead) have been significantly improved compared with 1S1R-type devices and non-linear ReRAMs (Figs. 1-2) [2]-[5]. In addition, AC behaviors of the selector-less ReRAM have been investigated with various AC pulse shape to realize the AC operation of the selector-less ReRAM in cross-point array. Hence, significantly improved AC switching reliability of the selector-less ReRAM was obtained by adopting triangular AC pulse shapes for both set and reset mode.",

author = "Sangheon Lee and Daeseok Lee and Jiyong Woo and Euijun Cha and Jeonghwan Song and Jaesung Park and Hyunsang Hwang",

year = "2013",

doi = "10.1109/IEDM.2013.6724603",

language = "English",

isbn = "9781479923076",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "10.6.1--10.6.4",

booktitle = "2013 IEEE International Electron Devices Meeting, IEDM 2013",

note = "2013 IEEE International Electron Devices Meeting, IEDM 2013 ; Conference date: 09-12-2013 Through 11-12-2013",

}

Lee, S, Lee, D, Woo, J, Cha, E, Song, J, Park, J & Hwang, H 2013, Selector-less ReRAM with an excellent non-linearity and reliability by the band-gap engineered multi-layer titanium oxide and triangular shaped AC pulse. in 2013 IEEE International Electron Devices Meeting, IEDM 2013., 6724603, Technical Digest - International Electron Devices Meeting, IEDM, pp. 10.6.1-10.6.4, 2013 IEEE International Electron Devices Meeting, IEDM 2013, Washington, DC, United States, 9/12/13. https://doi.org/10.1109/IEDM.2013.6724603

Selector-less ReRAM with an excellent non-linearity and reliability by the band-gap engineered multi-layer titanium oxide and triangular shaped AC pulse. / Lee, Sangheon; Lee, Daeseok; Woo, Jiyong et al.
2013 IEEE International Electron Devices Meeting, IEDM 2013. 2013. p. 10.6.1-10.6.4 6724603 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Selector-less ReRAM with an excellent non-linearity and reliability by the band-gap engineered multi-layer titanium oxide and triangular shaped AC pulse

AU - Lee, Sangheon

AU - Lee, Daeseok

AU - Woo, Jiyong

AU - Cha, Euijun

AU - Song, Jeonghwan

AU - Park, Jaesung

AU - Hwang, Hyunsang

PY - 2013

Y1 - 2013

N2 - The effect of oxygen profile control of a multi-layer TiOx on tunnel barrier characteristics has been investigated to achieve high non-linearity, endurance, and uniformity of a selector-less ReRAM. By optimizing oxygen profile of TiOx layer in the selector-less ReRAM, non-linearity and a readout margin (low ILRS at 1/2VRead) have been significantly improved compared with 1S1R-type devices and non-linear ReRAMs (Figs. 1-2) [2]-[5]. In addition, AC behaviors of the selector-less ReRAM have been investigated with various AC pulse shape to realize the AC operation of the selector-less ReRAM in cross-point array. Hence, significantly improved AC switching reliability of the selector-less ReRAM was obtained by adopting triangular AC pulse shapes for both set and reset mode.

AB - The effect of oxygen profile control of a multi-layer TiOx on tunnel barrier characteristics has been investigated to achieve high non-linearity, endurance, and uniformity of a selector-less ReRAM. By optimizing oxygen profile of TiOx layer in the selector-less ReRAM, non-linearity and a readout margin (low ILRS at 1/2VRead) have been significantly improved compared with 1S1R-type devices and non-linear ReRAMs (Figs. 1-2) [2]-[5]. In addition, AC behaviors of the selector-less ReRAM have been investigated with various AC pulse shape to realize the AC operation of the selector-less ReRAM in cross-point array. Hence, significantly improved AC switching reliability of the selector-less ReRAM was obtained by adopting triangular AC pulse shapes for both set and reset mode.

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M3 - Conference contribution

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ER -

Lee S, Lee D, Woo J, Cha E, Song J, Park J et al. Selector-less ReRAM with an excellent non-linearity and reliability by the band-gap engineered multi-layer titanium oxide and triangular shaped AC pulse. In 2013 IEEE International Electron Devices Meeting, IEDM 2013. 2013. p. 10.6.1-10.6.4. 6724603. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2013.6724603

Selector-less ReRAM with an excellent non-linearity and reliability by the band-gap engineered multi-layer titanium oxide and triangular shaped AC pulse

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