Selector-less RRAM with non-linearity of device for cross-point array applications

Jiyong Woo; Daeseok Lee; Godeuni Choi; Euijun Cha; Seonghyun Kim; Wootae Lee; Sangsu Park; Hyunsang Hwang

doi:10.1016/j.mee.2013.03.130

Selector-less RRAM with non-linearity of device for cross-point array applications

Jiyong Woo
, Daeseok Lee
, Godeuni Choi
, Euijun Cha
, Seonghyun Kim
, Wootae Lee
, Sangsu Park
, Hyunsang Hwang

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

We achieved resistive switching characteristics with non-linearity for selector-less RRAM. The non-linear characteristic was obtained by controlling operation currents. The observed non-linearity in the low resistance state (LRS) can be explained by thermally-formed suboxide region under higher operation currents. By using the non-linear characteristic, the RRAM device as one-resistor memory cell with TiO_x/TiO_y bi-layer structure is applicable to cross-point array without additional selector device for the suppression of sneak-path currents.

Original language	English
Pages (from-to)	360-363
Number of pages	4
Journal	Microelectronic Engineering
Volume	109
DOIs	https://doi.org/10.1016/j.mee.2013.03.130
State	Published - 2013

Keywords

Cross-point array
RRAM
Selector

Access to Document

10.1016/j.mee.2013.03.130

Cite this

@article{91a6d95f4eeb401499eef43541132197,

title = "Selector-less RRAM with non-linearity of device for cross-point array applications",

abstract = "We achieved resistive switching characteristics with non-linearity for selector-less RRAM. The non-linear characteristic was obtained by controlling operation currents. The observed non-linearity in the low resistance state (LRS) can be explained by thermally-formed suboxide region under higher operation currents. By using the non-linear characteristic, the RRAM device as one-resistor memory cell with TiOx/TiOy bi-layer structure is applicable to cross-point array without additional selector device for the suppression of sneak-path currents.",

keywords = "Cross-point array, RRAM, Selector",

author = "Jiyong Woo and Daeseok Lee and Godeuni Choi and Euijun Cha and Seonghyun Kim and Wootae Lee and Sangsu Park and Hyunsang Hwang",

year = "2013",

doi = "10.1016/j.mee.2013.03.130",

language = "English",

volume = "109",

pages = "360--363",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Selector-less RRAM with non-linearity of device for cross-point array applications

AU - Woo, Jiyong

AU - Lee, Daeseok

AU - Choi, Godeuni

AU - Cha, Euijun

AU - Kim, Seonghyun

AU - Lee, Wootae

AU - Park, Sangsu

AU - Hwang, Hyunsang

PY - 2013

Y1 - 2013

N2 - We achieved resistive switching characteristics with non-linearity for selector-less RRAM. The non-linear characteristic was obtained by controlling operation currents. The observed non-linearity in the low resistance state (LRS) can be explained by thermally-formed suboxide region under higher operation currents. By using the non-linear characteristic, the RRAM device as one-resistor memory cell with TiOx/TiOy bi-layer structure is applicable to cross-point array without additional selector device for the suppression of sneak-path currents.

AB - We achieved resistive switching characteristics with non-linearity for selector-less RRAM. The non-linear characteristic was obtained by controlling operation currents. The observed non-linearity in the low resistance state (LRS) can be explained by thermally-formed suboxide region under higher operation currents. By using the non-linear characteristic, the RRAM device as one-resistor memory cell with TiOx/TiOy bi-layer structure is applicable to cross-point array without additional selector device for the suppression of sneak-path currents.

KW - Cross-point array

KW - RRAM

KW - Selector

UR - https://www.scopus.com/pages/publications/84876955662

U2 - 10.1016/j.mee.2013.03.130

DO - 10.1016/j.mee.2013.03.130

M3 - Article

AN - SCOPUS:84876955662

SN - 0167-9317

VL - 109

SP - 360

EP - 363

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Selector-less RRAM with non-linearity of device for cross-point array applications

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this