Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications

Sangsu Park; Seungjae Jung; Manzar Siddik; Minseok Jo; Jubong Park; Seonghyun Kim; Wootae Lee; Jungho Shin; Daeseok Lee; Godeuni Choi; Jiyong Woo; Euijun Cha; Byoung Hun Lee; Hyunsang Hwang

doi:10.1002/pssr.201206382

Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications

Sangsu Park
, Seungjae Jung
, Manzar Siddik
, Minseok Jo
, Jubong Park
, Seonghyun Kim
, Wootae Lee
, Jungho Shin
, Daeseok Lee
, Godeuni Choi
, Jiyong Woo
, Euijun Cha
, Byoung Hun Lee
, Hyunsang Hwang

School of Electronics Engineering

Gwangju Institute of Science and Technology
Pohang University of Science and Technology

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

We propose a selector-less Pr _0.7Ca _0.3MnO ₃ (PCMO) based resistive-switching RAM (RRAM) for high-density cross-point memory array applications. First, we investigate the inhomogeneous barrier with an effective barrier height (Φ _eff), i.e., self-formed Schottky barrier. In addition, a scalable 4F ² selector-less cross-point 1 kb RRAM array has been successfully fabricated, demonstrating set, reset, and read operation for high cell efficiency and high-density memory applications.

Original language	English
Pages (from-to)	454-456
Number of pages	3
Journal	Physica Status Solidi - Rapid Research Letters
Volume	6
Issue number	11
DOIs	https://doi.org/10.1002/pssr.201206382
State	Published - Nov 2012

Keywords

Cross-point memory
Manganites
Pr Ca MnO
Resistive switching
RRAM
Schottky barrier

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10.1002/pssr.201206382

Cite this

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title = "Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications",

abstract = "We propose a selector-less Pr 0.7Ca 0.3MnO 3 (PCMO) based resistive-switching RAM (RRAM) for high-density cross-point memory array applications. First, we investigate the inhomogeneous barrier with an effective barrier height (Φ eff), i.e., self-formed Schottky barrier. In addition, a scalable 4F 2 selector-less cross-point 1 kb RRAM array has been successfully fabricated, demonstrating set, reset, and read operation for high cell efficiency and high-density memory applications.",

keywords = "Cross-point memory, Manganites, Pr Ca MnO, Resistive switching, RRAM, Schottky barrier",

author = "Sangsu Park and Seungjae Jung and Manzar Siddik and Minseok Jo and Jubong Park and Seonghyun Kim and Wootae Lee and Jungho Shin and Daeseok Lee and Godeuni Choi and Jiyong Woo and Euijun Cha and Lee, \{Byoung Hun\} and Hyunsang Hwang",

year = "2012",

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doi = "10.1002/pssr.201206382",

language = "English",

volume = "6",

pages = "454--456",

journal = "Physica Status Solidi - Rapid Research Letters",

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T1 - Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications

AU - Park, Sangsu

AU - Jung, Seungjae

AU - Siddik, Manzar

AU - Jo, Minseok

AU - Park, Jubong

AU - Kim, Seonghyun

AU - Lee, Wootae

AU - Shin, Jungho

AU - Lee, Daeseok

AU - Choi, Godeuni

AU - Woo, Jiyong

AU - Cha, Euijun

AU - Lee, Byoung Hun

AU - Hwang, Hyunsang

PY - 2012/11

Y1 - 2012/11

N2 - We propose a selector-less Pr 0.7Ca 0.3MnO 3 (PCMO) based resistive-switching RAM (RRAM) for high-density cross-point memory array applications. First, we investigate the inhomogeneous barrier with an effective barrier height (Φ eff), i.e., self-formed Schottky barrier. In addition, a scalable 4F 2 selector-less cross-point 1 kb RRAM array has been successfully fabricated, demonstrating set, reset, and read operation for high cell efficiency and high-density memory applications.

AB - We propose a selector-less Pr 0.7Ca 0.3MnO 3 (PCMO) based resistive-switching RAM (RRAM) for high-density cross-point memory array applications. First, we investigate the inhomogeneous barrier with an effective barrier height (Φ eff), i.e., self-formed Schottky barrier. In addition, a scalable 4F 2 selector-less cross-point 1 kb RRAM array has been successfully fabricated, demonstrating set, reset, and read operation for high cell efficiency and high-density memory applications.

KW - Cross-point memory

KW - Manganites

KW - Pr Ca MnO

KW - Resistive switching

KW - RRAM

KW - Schottky barrier

UR - https://www.scopus.com/pages/publications/84869123167

U2 - 10.1002/pssr.201206382

DO - 10.1002/pssr.201206382

M3 - Article

AN - SCOPUS:84869123167

SN - 1862-6254

VL - 6

SP - 454

EP - 456

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 11

ER -

Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications

Abstract

Keywords

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