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Self-Powered Betavoltaic Cell Design for Enabling Long-Term Power in Space

  • Jaewon Park
  • , Hyeon Tak Kwak
  • , Dong Seok Kim
  • , Hyun Woo Lee
  • , Hoe Min Kwak
  • , Huiyun Jung
  • , Donghan Kim
  • , Dong Young Kim
  • , Jeong Gil Kim
  • , Hongsik Park
  • , Sung Bum Bae
  • , Hyung Seok Lee
  • Electronics and Telecommunications Research Institute
  • Korea Atomic Energy Research Institute
  • Kyungpook National University
  • Dong-A University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, GaN-based PIN betavoltaic cells were fabricated and experimentally evaluated under electron beam irradiation. The devices were fabricated on GaN-on-sapphire templates, using both fully and partially anode-covered layouts to examine the effect of anode coverage on power conversion efficiency. The devices were characterized under dark and 17 keV electron beam irradiation, corresponding to the average energy of Ni-63 beta decay. Monte Carlo simulations were conducted to evaluate the energy absorption and penetration depth of incident electrons within the GaN layers. In our results, the fully anode-covered structure exhibited the highest performance, achieving power conversion efficiency of 4.75%, which is the highest reported value for GaN-based betavoltaic cells under equivalent irradiation conditions.

Original languageEnglish
Title of host publication2025 16th International Conference on Information and Communication Technology Convergence, ICTC 2025
PublisherIEEE Computer Society
Pages757-758
Number of pages2
ISBN (Electronic)9798331556785
DOIs
StatePublished - 2025
Event16th International Conference on Information and Communication Technology Convergence, ICTC 2025 - , Korea, Republic of
Duration: 14 Oct 202517 Oct 2025

Publication series

NameInternational Conference on ICT Convergence
ISSN (Print)2162-1233
ISSN (Electronic)2162-1241

Conference

Conference16th International Conference on Information and Communication Technology Convergence, ICTC 2025
Country/TerritoryKorea, Republic of
Period14/10/2517/10/25

Keywords

  • betavoltaic cell
  • e-beam irradiation
  • GaN
  • monte carlo simulation
  • PIN junction

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